DMN5/L06VK/L06VAK/010VAK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V Max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ESD Protected up to 2kV
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
D
2
G
1
S
1
D
2
S
1
G
1
S
2
G
2
D
1
G
2
S
2
D
1
ESD protected up to 2kV
SOT563
Top View
DMN5L06VK
DMN5L06VAK
DMN5010VAK
Ordering Information
(Note 4)
Part Number
DMN5L06VK-7
DMN5L06VK-7A
DMN5L06VK-13
DMN5L06VK-13A
DMN5L06VAK-7
DMN5L06VAK-7A
DMN5L06VAK-13
DMN5L06VAK-13A
DMN5010VAK-7
DMN5010VAK-7A
DMN5010VAK-13
DMN5010VAK-13A
Notes:
Case
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
Packaging
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4.
For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 13 - 2
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February 2017
© Diodes Incorporated
DMN5/L06VK/L06VAK/010VAK
Marking Information
(Note 5 & 6)
DMN5L06VK-7/-13 (Note 5)
DMN5L06VK-7A/-13A (Note 6)
6
5
4
D
1
G
2
S
2
D
1
G
2
S
2
KAB
S
1
G
1
YM
D
2
KAB
S
1
1
YM
D
2
3
2
G
1
KAB= DMN5L06VK Product Type
Marking Code
YM = Date Code Marking
Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
DMN5L06VAK-7/-13 (Note 5)
DMN5010VAK-7/-13 (Note 5)
DMN5L06VAK-7A/-13A (Note 6)
DMN5010VAK-7A/-13A (Note 6)
6
5
4
D
1
S
2
G
2
D
1
S
2
G
2
xxx
G
1
S
1
YM
D
2
xxx
G
1
1
YM
S
1
2
xxx = Product Type Marking Code:
KAE or KAE or KAC
YM = Date Code Marking
Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
D
2
3
Date Code Key
Year
2006
Code
T
Month
Code
Notes:
~
~
Feb
2
2016
D
Mar
3
2017
E
Apr
4
2018
F
May
5
2019
G
Jun
6
2020
H
Jul
7
2021
I
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
Jan
1
5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180°rotated, or mixed (both ways).
6. Part number with suffix 7A and 13A designates devices marked with a Pin 1 indicator. There is no other difference between both devices.
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 13 - 2
2 of 7
www.diodes.com
February 2017
© Diodes Incorporated
DMN5/L06VK/L06VAK/010VAK
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain Source Voltage
Drain-Gate Voltage R
GS
1.0MΩ
Gate-Source Voltage
Drain Current (Note 7)
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DM
Value
50
50
20
40
280
1.5
Unit
V
V
V
mA
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J
, T
STG
Value
250
500
-55 to +150
Unit
mW
C/W
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
@ T
C
= +25°
C
I
DSS
I
GSS
Min
50
—
—
Typ
—
—
—
Max
—
60
1
500
50
1.0
1.2
3.0
2.5
2.0
—
—
1.4
50
25
5.0
Unit
V
nA
µA
nA
nA
Test Condition
V
GS
= 0V, I
D
= 10µA
V
DS
= 50V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
GS
= ±5V, V
DS
= 0V
Characteristic
OFF CHARACTERISTICS
(Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS
(Note 8)
Gate Threshold Voltage
@T
J
= +25°
C
@T
J
= +0° to +85° (Note 9)
C
C
V
GS(TH)
0.49
0.30
—
—
—
0.5
200
0.5
—
—
—
—
—
—
—
1.4
—
—
—
—
—
V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 1.8V, I
D
= 50mA
V
GS
= 2.5V, I
D
= 50mA
V
GS
= 5.0V, I
D
= 50mA
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= 115mA
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
R
DS(ON)
I
D(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
Ω
A
mS
V
pF
pF
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 13 - 2
3 of 7
www.diodes.com
February 2017
© Diodes Incorporated
DMN5/L06VK/L06VAK/010VAK
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
R
DS(on)
, STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (
)
1
0
-50
0
75 100 125
-25
25
50
0
(
o
C)
T
ch
, CHANNEL TEMPERATURE (癈 )
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
150
I
D,
DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
10
T
A
= 25°
C
Pulsed
R
DS(on)
, STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (
)
R
DS(on)
, STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (
)
I
D
= 280mA
1
I
D
, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
V
GS,
GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 13 - 2
4 of 7
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February 2017
© Diodes Incorporated
DMN5/L06VK/L06VAK/010VAK
I
D
= 280mA
T
A
, AMBIENT TEMPERATURE (°
C)
Fig. 7
Static Drain-Source On-State Resistance
vs. Ambient Temperature
|Y
fs
|, FORWARD TRANSFER ADMITTANCE (S)
I
DR
, REVERSE DRAIN CURRENT (A)
I
DR
, REVERSE DRAIN CURRENT (A)
V
GS
= 10V
Pulsed
R
DS(on)
, STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (
)
1
I
D
, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
250
P
D
, POWER DISSIPATION (mW)
200
150
100
50
0
-50
0
50
100
T
A
, AMBIENT TEMPERATURE (°
C)
Fig. 11 Derating Curve - Total
150
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 13 - 2
5 of 7
www.diodes.com
February 2017
© Diodes Incorporated
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