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DXTA92

Description
500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size200KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

DXTA92 Overview

500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR

DXTA92 Parametric

Parameter NameAttribute value
Number of terminals4
Transistor polarityPNP
Maximum collector current0.5000 A
Maximum Collector-Emitter Voltage300 V
Processing package descriptionGREEEN, PLASTIC, SOT89-3L, 4 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor40
Rated crossover frequency50 MHz
DXTA92
PNP SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (DXTA42)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
NEW PRODUCT
SOT89-3L
COLLECTOR
2,4
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-300
-300
-5
-500
Unit
V
V
V
mA
3 E
C 4
2 C
1 B
1
BASE
TOP VIEW
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Characteristic
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
j
, T
STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cut-off Current
Emitter-Base Cut-off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Static Forward Current Transfer Ratio
SMALL SIGNAL CHARACTERISTICS
Gain-Bandwidth Product
Output Capacitance
Notes:
1.
2.
3.
4.
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
Min
-300
-300
-5
25
40
25
50
Typ
Max
-0.25
-0.1
-0.5
-0.9
6
Unit
V
V
V
μA
μA
V
V
V
Test Conditions
I
C
= -100μA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -100μA, I
C
= 0
V
CB
= -200V, I
E
= 0
V
EB
= -3V, I
C
= 0A
I
C
= -20mA, I
B
= -2mA
I
C
= -20mA, I
B
= -2mA
I
C
= -1mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -30mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -20V,
f = 100MHz
V
CB
= -20V, f = 1MHz
f
T
C
obo
MHz
pF
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
DS31159 Rev. 4 - 2
1 of 4
www.diodes.com
DXTA92
© Diodes Incorporated
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