DZT491
NPN SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Type Available (DZT591C)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
3
2
1
NEW PRODUCT
4
Mechanical Data
•
•
•
•
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Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
SOT-223
COLLECTOR
3 E
C 4
2 C
1 B
TOP VIEW
1
BASE
2,4
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
d
T
j
, T
STG
Value
80
60
5
1
2
200
1
-55 to +150
Unit
V
V
V
A
A
mA
W
°C
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Continuous Current (Note 3)
Peak Collector Current
Base Current
Power Dissipation (Note 3)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
@T
A
= 25°C unless otherwise specified
Symbol
I
CBO
I
EBO
I
CES
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(SAT)
Min
⎯
⎯
⎯
80
60
5
⎯
⎯
100
100
80
30
⎯
⎯
150
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
100
100
100
⎯
⎯
⎯
0.25
0.5
⎯
300
⎯
⎯
1.1
1
⎯
10
Unit
nA
nA
nA
V
V
V
V
V
⎯
⎯
⎯
⎯
V
V
V
CB
= 60V
V
EB
= 4V
V
CES
= 60V
I
C
= 100μA
I
C
= 10mA
I
E
= 100μA
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 500mA
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 2A
I
C
= 1A, I
B
= 100mA
I
C
= 1A, V
CE
= 5V
Test Conditions
DC Current Gain
h
FE
V
BE(SAT)
V
BE(on)
f
T
C
obo
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Notes:
1.
2.
3.
4.
MHz V
CE
= 10V, I
C
= 50mA, f = 100MHz
pF V
CB
= 10V, I
E
= 0A, f =1MHz
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB, pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Measured under pulsed conditions. Pulse width = 300ms duty cycle
≤
2%
DS30946 Rev. 3 - 2
1 of 4
www.diodes.com
DZT491
© Diodes Incorporated
Suggested Pad Layout: (Based on IPC-SM-782)
NEW PRODUCT
(Unit: mm)
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30946 Rev. 3 - 2
4 of 4
www.diodes.com
DZT491
© Diodes Incorporated
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