|
2SK2364-AZ |
2SK2363 |
2SK2364 |
| Description |
2SK2364-AZ |
8A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, MP-45F, ISOLATED TO-220, 3 PIN |
8A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, MP-45F, ISOLATED TO-220, 3 PIN |
| Is it Rohs certified? |
conform to |
incompatible |
incompatible |
| Parts packaging code |
MP-45F |
SFM |
SFM |
| package instruction |
MP-45F, ISOLATED TO-220, 3 PIN |
FLANGE MOUNT, R-PSFM-T3 |
FLANGE MOUNT, R-PSFM-T3 |
| Contacts |
3 |
3 |
3 |
| Reach Compliance Code |
compli |
compli |
compli |
| Other features |
HIGH VOLTAGE, AVALANCHE RATING |
HIGH VOLTAGE, AVALANCHE RATING |
HIGH VOLTAGE, AVALANCHE RATING |
| Avalanche Energy Efficiency Rating (Eas) |
320 mJ |
320 mJ |
320 mJ |
| Shell connection |
ISOLATED |
ISOLATED |
ISOLATED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage |
500 V |
450 V |
500 V |
| Maximum drain current (Abs) (ID) |
8 A |
8 A |
8 A |
| Maximum drain current (ID) |
8 A |
8 A |
8 A |
| Maximum drain-source on-resistance |
0.6 Ω |
0.5 Ω |
0.6 Ω |
| FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code |
TO-220 |
TO-220 |
TO-220 |
| JESD-30 code |
R-PSFM-T3 |
R-PSFM-T3 |
R-PSFM-T3 |
| Number of components |
1 |
1 |
1 |
| Number of terminals |
3 |
3 |
3 |
| Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Maximum operating temperature |
150 °C |
150 °C |
150 °C |
| Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
| Package form |
FLANGE MOUNT |
FLANGE MOUNT |
FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
| Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
| Maximum power dissipation(Abs) |
35 W |
35 W |
35 W |
| Maximum pulsed drain current (IDM) |
32 A |
32 A |
32 A |
| Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
| surface mount |
NO |
NO |
NO |
| Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
| Terminal location |
SINGLE |
SINGLE |
SINGLE |
| Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
| transistor applications |
SWITCHING |
SWITCHING |
SWITCHING |
| Transistor component materials |
SILICON |
SILICON |
SILICON |
| Base Number Matches |
1 |
1 |
1 |
| Is it lead-free? |
- |
Contains lead |
Contains lead |
| JESD-609 code |
- |
e0 |
e0 |
| Terminal surface |
- |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
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