2SK2364 datasheet, PDF - EEWORLD Datasheet

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2SK2364: Description8A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, MP-45F, ISOLATED TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size175KB，8 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2SK2364 Overview

8A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, MP-45F, ISOLATED TO-220, 3 PIN

2SK2364 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compli
Other features	HIGH VOLTAGE, AVALANCHE RATING
Avalanche Energy Efficiency Rating (Eas)	320 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	8 A
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	0.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	35 W
Maximum pulsed drain current (IDM)	32 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2SK2364 Related Products

	2SK2364	2SK2363	2SK2364-AZ
Description	8A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, MP-45F, ISOLATED TO-220, 3 PIN	8A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, MP-45F, ISOLATED TO-220, 3 PIN	2SK2364-AZ
Is it Rohs certified?	incompatible	incompatible	conform to
Parts packaging code	SFM	SFM	MP-45F
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	MP-45F, ISOLATED TO-220, 3 PIN
Contacts	3	3	3
Reach Compliance Code	compli	compli	compli
Other features	HIGH VOLTAGE, AVALANCHE RATING	HIGH VOLTAGE, AVALANCHE RATING	HIGH VOLTAGE, AVALANCHE RATING
Avalanche Energy Efficiency Rating (Eas)	320 mJ	320 mJ	320 mJ
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	450 V	500 V
Maximum drain current (Abs) (ID)	8 A	8 A	8 A
Maximum drain current (ID)	8 A	8 A	8 A
Maximum drain-source on-resistance	0.6 Ω	0.5 Ω	0.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220	TO-220	TO-220
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	35 W	35 W	35 W
Maximum pulsed drain current (IDM)	32 A	32 A	32 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1
Is it lead-free?	Contains lead	Contains lead	-
JESD-609 code	e0	e0	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-

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