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DL4004

Description
1 A, 400 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size462KB,2 Pages
ManufacturerDIOTECH
Websitehttp://www.kdiode.com/
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DL4004 Overview

1 A, 400 V, SILICON, SIGNAL DIODE

DL4001 THRU DL4007
Reverse Voltage - 50 to 1000 Volts
SURFACE MOUNT GENERAL RECTIFIER
Forward Current - 1.0 Ampere
FEATURES
Ideal for surface mounted applications
Low leakage current
Glass passivated junction
LL- 41 (MELF)
MECHANICAL DATA
Case
:
Molded plastic
EPOXY
: UL 94V-0
rate flame retardant
Teminals
:
Solder plated solderable per
MIL-STD-202E, Method 208 guaranteed
Mounting Position:
Any
Weight
: 0.12 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current T
A
= 75 C
Peak Forward Surge Current I
FM
(surge): 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage at 1.0A DC
Maximum DC Reverse Current at
Rated DC Blocking Voltage
Maximum Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
@T
A
= 25 C
@T
A
= 125 C
o
o
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
I
R
JL
C
J
T
J
, T
STG
DL4001
50
35
50
DL4002
100
70
100
DL4003 DL4004 DL4005 DL4006
200
400
600
800
140
200
280
400
1.0
30
1.1
5.0
50
20
15
-55 to + 150
420
600
560
800
DL4007
1000
700
1000
UNITS
V
V
V
A
A
V
µA
0
C/ W
pF
0
C
NOTES : 1. Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
2. Thermal resistance (Junction to Ambient),.24in
2
(6.0mm
2
) coppeer pads to each terminal.

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