DSS20200L
20V PNP LOW SATURATION TRANSISTOR IN SOT23
Features
•
•
•
•
•
•
•
•
•
BV
CEO
> -20V
I
C
= -2A Continuous Collector Current
I
CM
= -4A Peak Pulse Current
Low Saturation Voltage V
CE(sat)
< -120mV @ -1A
R
CE(SAT)
= 40mΩ for a low equivalent on-resistance
Complimentary NPN Type : DSS20201L
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
Case: SOT23
Case Material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
SOT23
C
E
C
B
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Product
DSS20200L-7
DSS20200L-13
Notes:
Marking
ZP1
ZP1
Reel size (inches)
7
13
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZP1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
ZP1
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
Feb
2
2009
W
Mar
3
2010
X
Apr
4
May
5
YM
2011
Y
Jun
6
2012
Z
Jul
7
Aug
8
2013
A
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
DSS20200L
Document number: DS31604 Rev. 3 - 2
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www.diodes.com
November 2013
© Diodes Incorporated
DSS20200L
Absolute Maximum Ratings
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Collector Current
Continuous Collector Current
(@T
A
= +25°C, unless otherwise specified.)
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
Value
-20
-20
-7
-4
-2
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
Symbol
P
D
R
θJA
R
θJL
T
J
, T
STG
Value
600
1.2
209
104
75
-55 to +150
°C
Unit
mW
°C/W
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still
air conditions whilst operating in a steady-state.
6. Same as note (5), except mounted on 25mm x 25mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS20200L
Document number: DS31604 Rev. 3 - 2
2 of 7
www.diodes.com
November 2013
© Diodes Incorporated
DSS20200L
Thermal Characteristics and Derating information
1.6
1.4
10
P
D
, POWER DISSIPATION (W)
-I
C
, COLLECTOR CURRENT (A)
1.2
1.0
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
°
C)
Figure 1 Power Dissipation vs. Ambient Temperature
0
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
1
Pw = 10ms
Pw = 100ms
(Note 4)
0.1
DC
(Note 3)
0.01
0.001
0.1
1
10
100
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 2 Typical Collector Current
vs. Collector-Emitter Voltage
0.1
D = 0.1
D = 0.05
D = 0.9
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 166°C/W
P(pk)
D = 0.02
0.01
D = 0.01
D = 0.005
t
1
D = Single Pulse
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Figure 3 Transient Thermal Response
10
100
1,000
DSS20200L
Document number: DS31604 Rev. 3 - 2
3 of 7
www.diodes.com
November 2013
© Diodes Incorporated
DSS20200L
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 9)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min
-20
-20
-7
⎯
⎯
250
DC Current Gain
h
FE
250
180
150
⎯
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
⎯
⎯
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Note:
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-50
-100
-80
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
⎯
⎯
-100
-100
⎯
⎯
⎯
⎯
-13
-90
-120
-180
90
-0.9
-0.9
⎯
100
330
180
60
120
430
300
130
Unit
V
V
V
nA
nA
Test Conditions
I
C
= -100µA
I
C
= -10mA
I
E
= -100µA
V
CB
= -20V, I
E
= 0
V
EB
= -7V, I
C
= 0
V
CE
= -2V, I
C
= -10mA
⎯
V
CE
= -2V, I
C
= -500mA
V
CE
= -2V, I
C
= -1A
V
CE
= -2V, I
C
= -2A
I
C
= -0.1A, I
B
= -10mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, I
B
= -10mA
I
C
= -2A, I
B
= -200mA
I
C
= -2A, I
B
= -200mA
I
C
= -1A, I
B
= -10mA
V
CE
= -2V, I
C
= -1A
V
CE
= -5V, I
C
= -100mA,
f = 100MHz
V
CB
= -3V, f = 1MHz
V
EB
= -0.5V, f = 1MHz
mV
R
CE(SAT)
V
BE(SAT)
V
BE(ON)
f
T
C
obo
C
ibo
t
on
t
d
t
r
t
off
t
s
t
f
⎯
⎯
⎯
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
mΩ
V
V
MHz
pF
pF
ns
ns
ns
ns
ns
ns
V
CC
= -15V, I
C
= -750mA,
I
B1
= -15mA
V
CC
= -15V, I
C
= -750mA,
I
B1
= I
B2
= -15mA
9. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
2.0
1.8
-I
C
, COLLECTOR CURRENT (A)
h
FE
, DC CURRENT GAIN
1,000
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I
B
= -1mA
I
B
= -2mA
I
B
= -5mA
I
B
= -4mA
I
B
= -3mA
T
A
= -55°C
100
V
CE
= -2V
0.2
0
0
2
4
6
8
10
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 4 Typical Collector Current
vs. Collector-Emitter Voltage
10
0.1
1
10
100
1,000 10,000
-I
C
, COLLECTOR CURRENT (mA)
Figure 5 Typical DC Current Gain vs. Collector Current
DSS20200L
Document number: DS31604 Rev. 3 - 2
4 of 7
www.diodes.com
November 2013
© Diodes Incorporated
DSS20200L
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1
I
C
/I
B
= 10
1.2
V
CE
= -2V
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
1.0
0.1
T
A
= 150°C
T
A
= 85°C
0.8
T
A
= -55°C
0.6
T
A
= 25°C
0.01
T
A
= 25°C
T
A
= -55°C
0.4
T
A
= 85°C
T
A
= 150°C
0.2
0
0.001
10
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
Figure 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
I
C
/I
B
= 10
1
1
10
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
Figure 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.2
1.0
1,000
f = 1MHz
CAPACITANCE (pF)
0.8
T
A
= -55°C
100
C
ibo
0.6
T
A
= 25°C
T
A
= 85°C
T
A
= 150°C
C
obo
0.4
10
0.2
0
1
1
10
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
Figure 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Figure 9 Typical Capacitance Characteristics
1,000
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
100
10
V
CE
= -5V
f = 100MHz
1
0
10
20 30 40 50 60 70 80 90 100
-I
C
, COLLECTOR CURRENT (mA)
Figure 10 Typical Gain-Bandwidth Product
vs. Collector Current
DSS20200L
Document number: DS31604 Rev. 3 - 2
5 of 7
www.diodes.com
November 2013
© Diodes Incorporated
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