NOT RECOMMENDED FOR NEW DESIGN
USE FZT658
DZT658
NPN SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
3
2
1
4
SOT-223
COLLECTOR
2,4
BASE 1
3
EMITTER
NEW PRODUCT
Mechanical Data
•
•
•
•
•
•
•
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
3 E
C 4
2 C
1 B
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Value
400
400
5
0.5
1
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation @T
A
= 25°C (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3) @T
A
= 25°C
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
Characteristic
Off Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
On Characteristics (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
AC Characteristics
Transition Frequency
Output Capacitance
Switching Times
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
400
400
5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
50
50
40
50
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
0.075
0.06
0.08
⎯
⎯
110
100
85
⎯
⎯
138
175
Max
⎯
⎯
⎯
100
100
0.3
0.25
0.5
0.9
1
⎯
⎯
⎯
⎯
10
⎯
⎯
Unit
V
V
V
nA
nA
V
V
V
V
V
⎯
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 320V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 20mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 100mA, I
B
= 10mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 5V, I
C
= 100mA
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 100mA
V
CE
= 10V, I
C
= 200mA
V
CE
= 20V, I
C
= 30mA, f = 30MHz
V
CB
= 20V, f = 1MHz
V
CC
= 100V, I
C
= 100mA
I
B1
= 10mA, I
B2
= -20mA
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
h
FE
f
T
C
obo
t
on
t
off
MHz
pF
ns
ns
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 3 or in Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Pulse Test: Pulse width
≤300μs.
Duty cycle
≤2.0%.
DS31308 Rev. 3 - 3
1 of 3
www.diodes.com
DZT658
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE FZT658
1.0
P
D
, POWER DISSIPATION (mW)
0.25
I
B
= 5mA
I
B
= 4mA
I
B
= 3mA
0.6
I
C
, COLLECTOR CURRENT (A)
0.8
0.20
0.15
I
B
= 2mA
NEW PRODUCT
0.4
0.10
I
B
= 1mA
0.2
0.05
0
25
50
150
100
125
75
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
0
0
0
1
2
3
4
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
5
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
250
10
200
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
1.0
150
100
0.1
50
0
0.001
0.01
0.1
1
0.01
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.8
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.0
1.0
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
DS31308 Rev. 3 - 3
2 of 3
www.diodes.com
DZT658
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE FZT658
Ordering Information
(Note 5)
Device
DZT658-13
Notes:
Packaging
SOT-223
Shipping
2500/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/ap2007.pdf.
NEW PRODUCT
Marking Information
(Top View)
YWW
KN4
KN4 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
Package Outline Dimensions
SOT-223
Dim Min Max Typ
A
1.55 1.65 1.60
A1
0.010 0.15 0.05
b1
2.90 3.10 3.00
b2
0.60 0.80 0.70
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
Suggested Pad Layout:
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS31308 Rev. 3 - 3
3 of 3
www.diodes.com
DZT658
© Diodes Incorporated
Embedded System
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