ES1E datasheet, PDF - EEWORLD Datasheet

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ES1E: Description1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC; Categorysemiconductor Discrete semiconductor; File Size398KB，2 Pages; ManufacturerDIOTECH; Websitehttp://www.kdiode.com/

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ES1E Overview

1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC

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Reverse Voltage - 50 to 600 Volts

SURFACE MOUNT SUPER FAST RECTIFIER

ES1A THRU ES1J

Forward Current - 1.0 Ampere

FEATURES

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

●

For surface mounted applications

●

SMA(DO-214AC)

Low reverse leakage

●

Built-in strain relief,ideal for automated placement

●

High forward surge current capability

●

High temperature soldering guaranteed:

250℃/10 seconds at terminals

Super fast switching for high efficiency

.062(1.60)

.055(1.40)

.114(2.90)

.098(2.50)

.181(4.60)

.157(4.00)

.012(.305)

.006(.152)

MECHANICAL DATA

Case

: JEDEC DO-214AC molded plastic body

Terminals

: Solder plated , solderable per MIL-STD-750,

Method 2026

Polarity

: Color band denotes cathode end

Mounting Position

: Any

Weight

: 0.064 grams (approx.)

.103(2.62)

.079(2.00)

.060(1.52)

.030(0.76)

.008(.203)

.002(.051)

.208(5.28)

.188(4.80)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

= 100°C

Non-Repetitive Peak Forward Surge

Current 8.3ms Single half sine-wave

superimposed on rated load (JEDEC Method)

Forward Voltage

= 1.0A

Symbol

RRM

RWM

R(RMS)

ES1A

ES1B

ES1C

ES1D

ES1E

ES1G

ES1J

Unit

100

150

105

200

140

1.0

300

210

400

280

600

420

FSM

, T

STG

0.95

1.3

5.0

500

-55 to +150

1.7

µA

°C

Peak Reverse Current

= 25°C

At Rated DC Blocking Voltage @T

= 125°C

Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range

Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

ES1E Related Products

	ES1E	ES1A	ES1C	ES1J	ES1B	ES1D	ES1G
Description	1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals	-	2	2	2	2	2	2
Number of components	-	1	1	1	1	1	1
Processing package description	-	Plastic, SMA, 2 PIN	SMA, 2 PIN	SMA, 2 PIN	GREEN, PLASTIC, SMA, 2 PIN	Plastic, SMA, 2 PIN	Plastic, HSMA, 2 PIN
state	-	ACTIVE	ACTIVE	TRANSFERRED	ACTIVE	ACTIVE	DISCONTINUED
packaging shape	-	Rectangle	RECTANGULAR	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	-	Yes	Yes	Yes	Yes	Yes	Yes
Terminal form	-	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND
Terminal location	-	pair	DUAL	pair	pair	pair	pair
Packaging Materials	-	Plastic/Epoxy	PLASTIC/EPOXY	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	-	single	SINGLE	single	single	single	single
Diode component materials	-	silicon	SILICON	silicon	silicon	silicon	silicon
Diode type	-	Signal diode	SIGNAL DIODE	Signal diode	Signal diode	Signal diode	Signal diode
Maximum reverse recovery time	-	0.0200 us	0.0150 us	0.0600 us	0.0350 us	0.0200 us	0.0600 us
Maximum repetitive peak reverse voltage	-	50 V	150 V	600 V	100 V	200 V	400 V
Maximum average forward current	-	1 A	1 A	1 A	1 A	1 A	1 A
terminal coating	-	-	MATTE TIN	NOT SPECIFIED	PURE Tin	PURE Tin	tin lead

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