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ES1D

Description
1 A, 200 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size398KB,2 Pages
ManufacturerDIOTECH
Websitehttp://www.kdiode.com/
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ES1D Overview

1 A, 200 V, SILICON, SIGNAL DIODE

ES1D Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMA, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingPURE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.0200 us
Maximum repetitive peak reverse voltage200 V
Maximum average forward current1 A
Reverse Voltage - 50 to 600 Volts
SURFACE MOUNT SUPER FAST RECTIFIER
ES1A THRU ES1J
Forward Current - 1.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
SMA(DO-214AC)
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250℃/10 seconds at terminals
Super fast switching for high efficiency
.062(1.60)
.055(1.40)
.114(2.90)
.098(2.50)
.181(4.60)
.157(4.00)
.012(.305)
.006(.152)
MECHANICAL DATA
Case
: JEDEC DO-214AC molded plastic body
Terminals
: Solder plated , solderable per MIL-STD-750,
Method 2026
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
: 0.064 grams (approx.)
.103(2.62)
.079(2.00)
.060(1.52)
.030(0.76)
.008(.203)
.002(.051)
.208(5.28)
.188(4.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
C
= 100°C
Non-Repetitive Peak Forward Surge
Current 8.3ms Single half sine-wave
superimposed on rated load (JEDEC Method)
Forward Voltage
@I
F
= 1.0A
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
ES1A
ES1B
ES1C
ES1D
ES1E
ES1G
ES1J
Unit
V
V
A
50
35
100
70
150
105
200
140
1.0
300
210
400
280
600
420
I
FSM
V
FM
I
RM
t
rr
C
j
T
j
, T
STG
0.95
30
1.3
5.0
500
35
10
-55 to +150
1.7
A
V
µA
nS
pF
°C
Peak Reverse Current
@T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 125°C
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

ES1D Related Products

ES1D ES1A ES1C ES1E ES1J ES1B ES1G
Description 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals 2 2 2 - 2 2 2
Number of components 1 1 1 - 1 1 1
Processing package description Plastic, SMA, 2 PIN Plastic, SMA, 2 PIN SMA, 2 PIN - SMA, 2 PIN GREEN, PLASTIC, SMA, 2 PIN Plastic, HSMA, 2 PIN
state ACTIVE ACTIVE ACTIVE - TRANSFERRED ACTIVE DISCONTINUED
packaging shape Rectangle Rectangle RECTANGULAR - Rectangle Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes - Yes Yes Yes
Terminal form C BEND C BEND C BEND - C BEND C BEND C BEND
terminal coating PURE Tin - MATTE TIN - NOT SPECIFIED PURE Tin tin lead
Terminal location pair pair DUAL - pair pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy PLASTIC/EPOXY - Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure single single SINGLE - single single single
Diode component materials silicon silicon SILICON - silicon silicon silicon
Diode type Signal diode Signal diode SIGNAL DIODE - Signal diode Signal diode Signal diode
Maximum reverse recovery time 0.0200 us 0.0200 us 0.0150 us - 0.0600 us 0.0350 us 0.0600 us
Maximum repetitive peak reverse voltage 200 V 50 V 150 V - 600 V 100 V 400 V
Maximum average forward current 1 A 1 A 1 A - 1 A 1 A 1 A

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