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5SDD10F6000

Description
Rectifier Diode, 1 Phase, 1 Element, 1363A, 6000V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size81KB,5 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5SDD10F6000 Overview

Rectifier Diode, 1 Phase, 1 Element, 1363A, 6000V V(RRM), Silicon,

5SDD10F6000 Parametric

Parameter NameAttribute value
MakerABB
Reach Compliance Codecompliant
ECCN codeEAR99
applicationHIGH VOLTAGE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-XEDB-N2
Maximum non-repetitive peak forward current20300 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1363 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formDISK BUTTON
Maximum repetitive peak reverse voltage6000 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND

5SDD10F6000 Preview

5SDD 10F6000
5SDD 10F6000
Old part no. DV 808-1000-60
High Voltage Diode
Properties
Low forward voltage drop
Low recovery charge
High operating temperature
Low leakage current
Applications
Rectifier bridges
Key Parameters
V
RRM
= 6 000
I
FAVm
= 1 363
I
FSM
= 17 500
V
TO
= 1.015
r
T
= 0.407
V
A
A
V
m
Types
V
RRM
5SDD 10F6000
Conditions:
6 000 V
T
j
= -40 ÷ 150 °C,
half sine waveform,
f = 50 Hz
Mechanical Data
F
m
m
D
S
D
a
Mounting force
Weight
Surface creepage
distance
Air strike distance
22 ± 2
0.46
30
20.5
kN
kg
mm
mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250,
http://www.abb.com/semiconductors
TS - D/010/98b Aug-11
1 of 5
5SDD 10F6000
Maximum Ratings
V
RRM
I
FAVm
I
FRMS
I
RRM
I
FSM
Repetitive peak reverse voltage
T
j
= -40 ÷ 150 °C
Maximum Limits
6 000
1 363
2 142
75
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 8.3 ms
t
p
= 10 ms
Unit
V
A
A
mA
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
°C
°C
Average forward current
T
c
= 85 °C
RMS forward current
Repetitive reverse current,
V
R
= V
RRM
Non repetitive peak surge current
V
R
= 0 V, half sine pulse, T
j
= 25 °C
20 300
19 000
18 700
17 500
1 710 000
1 805 000
1 450 000
1 531 250
-40 ÷ 150
-40 ÷ 150
Non repetitive peak surge current
V
R
= 0 V, half sine pulse
I
2
t
Limiting load integral
V
R
= 0 V, half sine pulse, T
j
= 25 °C
Limiting load integral
V
R
= 0 V, half sine pulse
T
jmin
-T
jmax
T
STG
Operating temperature range
Storage temperature range
Unless otherwise specified T
j
= 150 °C
Characteristics
min
V
T0
r
T
V
FM
Q
rr
Threshold voltage
I
F1
= 2 142 A, I
F2
= 6 425 A
Value
typ
max
1.015
0.407
1.60
3 000 4 000
Unit
V
m
V
µC
Forward slope resistance
Maximum forward voltage
I
FM
= 1 500 A
Recovered charge
V
R
= 100 V, I
FM
= 1 000 A, di
F
/dt = -10 A/ s
Unless otherwise specified T
j
= 150 °C
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/010/98b Aug-11
2 of 5
5SDD 10F6000
Thermal Parameters
R
thjc
Thermal resistance
junction to case
double side cooling
anode side cooling
cathode side cooling
Value
20
34
48
5
10
Unit
K/kW
R
thch
Thermal resistance
case to heatsink
double side cooling
single side cooling
K/kW
Transient Thermal Impedance
Analytical function for transient
thermal impedance
4
i
1
Transient thermal impedance
junction to case
Z
thjc
( K/kW )
i
R
i
( K/kW )
i
(
1
11.83
0.432
2
4.26
0.071
3
1.63
0.01
4
2.28
0.0054
s)
Z
thjc
R
i
(1 exp(
t
/
i
))
22
20
18
16
14
12
10
8
6
4
2
0
0,001
0,01
0,1
1
10
Conditions:
F
m
= 22 ± 2 kN, Double side cooled
Square wave pulse duration
t
d
( s )
Fig. 2
Dependence transient thermal impedance junction
to case on square pulse
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/010/98b Aug-11
3 of 5
5SDD 10F6000
I
F
( A )
7000
25 °C
150 °C
6000
5000
4000
3000
2000
1000
0
0
1
2
3
V
F
(V)
4
Fig. 3 Maximum forward voltage drop characteristics
i
2
dt
(10
6
A
2
s)
20
I
FSM
( kA )
15
I
FSM
( kA )
38
I
FSM
34
i
2
dt
2,2
2
30
1,8
26
1,6
10
V
R
= 0 V
22
1,4
18
1,2
5
V
R
0.5 V
RRM
14
1
10
1
10
t ( ms )
0,8
100
0
1
10
100
Number n of cycles at 50 Hz
Fig. 4 Surge forward current vs. pulse length,
half sine wave, single pulse,
V
R
= 0 V, T
j
= T
jmax
Fig. 5 Surge forward current vs. number
of pulses, half sine wave, T
j
= T
jmax
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/010/98b Aug-11
4 of 5
5SDD 10F6000
P
T
( W )
= 60° 120° 180°
P
T
( W )
3500
3500
= 30° 60° 90° 120° 180°
3000
3000
270°
DC
DC
2500
2500
2000
2000
1500
1500
1000
1000
500
500
0
0
200
400
600
800 1000 1200 1400 1600
0
0
200
400
600
800 1000 1200 1400 1600
I
FAV
( A )
I
FAV
( A )
Fig. 6 Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f
Fig. 7 Forward power loss vs. average forward
current, square waveform, f = 50 Hz,
T = 1/f
T
C
( °C )
150
140
130
120
110
100
90
80
70
T
C
( °C )
160
160
150
140
130
120
110
DC
100
90
80
70
DC
270°
= 60°
60
0
200
400
600
120° 180°
I
FAV
( A )
60
0
200
400
= 30° 60°
600
90° 120°
180°
800 1000 1200 1400 1600
800 1000 1200 1400 1600
I
FAV
( A )
Fig. 8 Max. case temperature vs. aver. forward
current, sine waveform, f = 50 Hz,
T = 1/f
Notes:
Fig. 9 Max.case temperature vs. aver. forward
current, square waveform, f = 50 Hz,
T = 1/f
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/010/98b Aug-11
5 of 5
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