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R1800

Description
0.5 A, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size413KB,2 Pages
ManufacturerDIOTECH
Websitehttp://www.kdiode.com/
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R1800 Overview

0.5 A, SILICON, SIGNAL DIODE, DO-41

R1200 THRU R2000
Reverse Voltage - 1200 to 2000 Volts
HIGH VOLTAGE SILICON RECTIFIER
Forward Current - 0.5 Ampere
FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
0.107 (2.7)
0.080 (2.0)
DIA.
DO-41
1.0 (25.4)
MIN.
MECHANICAL DATA
Case:
JEDEC DO-41 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.012
ounce, 0.33 grams
0.205 (5.2)
0.160(4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
A
= 50 C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Leakage Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
@ I
F
= 500mA
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
JA
@ T
A
= 25 C unless otherwise specified
R1200
1200
840
R1500
1500
1050
R1800
1800
1260
R2000
2000
1400
Unit
V
V
mA
A
500
30
2.0
5.0
30
70
-65 to +150
117
3.0
V
A
pF
K/W
C
T
j,
T
STG
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

R1800 Related Products

R1800 R1200 R1500 R2000
Description 0.5 A, SILICON, SIGNAL DIODE, DO-41 0.5 A, SILICON, SIGNAL DIODE, DO-41 0.5 A, 1500 V, SILICON, SIGNAL DIODE, DO-41 0.2 A, 2000 V, SILICON, SIGNAL DIODE, DO-41
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