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2SJ185-AT

Description
TRANSISTOR,MOSFET,P-CHANNEL,50V V(BR)DSS,100MA I(D),TO-236VAR
CategoryDiscrete semiconductor    The transistor   
File Size227KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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2SJ185-AT Overview

TRANSISTOR,MOSFET,P-CHANNEL,50V V(BR)DSS,100MA I(D),TO-236VAR

2SJ185-AT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompli
ConfigurationSingle
Maximum drain current (Abs) (ID)0.1 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.2 W
surface mountYES
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ185
P-CHANNEL MOSFET
FOR SWITCHING
The 2SJ185 is a P-channel vertical type MOSFET which can be
driven by 2.5 V power supply.
The 2SJ185 is driven by low voltage and does not require
consideration of driving current, it is suitable for appliances
including VTR cameras and headphone stereos which need
power saving.
2.9 ±0.2
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
0.4
–0.05
+0.1
1.5
0.65
–0.15
+0.1
0.95
Directly driven by ICs having a 3 V power supply.
Not necessary to consider driving current because of its high
Possible to reduce the number of parts by omitting the bias
resistor.
Complementary to 2SK1399
<R>
input impedance.
1.1 to 1.4
1
0.3
Marking
0.16
–0.06
+0.1
0.4
+0.1
–0.05
FEATURES
0.95
2
3
ORDERING INFORMATION
PART NUMBER
2SJ185
PACKAGE
SC-59 (Mini Mold)
Marking: H12
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Storage Temperature
Note
PW
10 ms, Duty Cycle
50%
<R>
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
stg
−50
m7.0
m100
m200
200
−55
to +150
V
V
mA
mA
mW
°C
EQUIVALENT CIRCUIT
Drain
0 to 0.1
1. Source
2. Gate
3. Drain
Total Power Dissipation
Gate
Gate
Protection
Diode
Body
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17903EJ3V0DS00 (3rd edition)
(Previous No. TC-2320)
Date Published February 2006 NS CP(K)
Printed in Japan
1991
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

2SJ185-AT Related Products

2SJ185-AT
Description TRANSISTOR,MOSFET,P-CHANNEL,50V V(BR)DSS,100MA I(D),TO-236VAR
Is it Rohs certified? conform to
Reach Compliance Code compli
Configuration Single
Maximum drain current (Abs) (ID) 0.1 A
FET technology METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Polarity/channel type P-CHANNEL
Maximum power dissipation(Abs) 0.2 W
surface mount YES
Base Number Matches 1
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