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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3634
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3634 is N-channel MOS FET device that features
a low on-state resistance and excellent switching
characteristics, and designed for high voltage applications
such as DC/DC converter.
ORDERING INFORMATION
PART NUMBER
2SK3634
2SK3634-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
•
High voltage: V
DSS
= 200 V
•
Gate voltage rating:
±30
V
R
DS(on)
= 0.60
Ω
MAX. (V
GS
= 10 V, I
D
= 3.0 A)
•
Low C
iss
: C
iss
= 270 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•
Built-in gate protection diode
•
TO-251/TO-252 package
•
Avalanche capability rated
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (Pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Repetitive Avalanche Current
Note3
Repetitive Pulse Avalanche Energy
Note3
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD =
100 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
μ
H
3.
T
ch
≤
125°C , R
G
= 25
Ω
, V
DD
= 100 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
I
AR
E
AR
200
±30
±6.0
±18
20
1.0
150
–55 to +150
6.0
3.6
6.0
2.0
V
V
A
A
W
W
°C
°C
A
mJ
A
mJ
(TO-252)
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15936EJ3V0DS00 (3rd edition)
Date Published August 2006 NS CP(K)
Printed in Japan
2001
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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