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RS407

Description
Bridge Rectifier Diode, 4A, 1000V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size96KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

RS407 Overview

Bridge Rectifier Diode, 4A, 1000V V(RRM),

RS407 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current150 A
Number of components4
Maximum operating temperature125 °C
Maximum output current4 A
Maximum repetitive peak reverse voltage1000 V
surface mountNO
BL
FEATURES
GALAXY ELECTRICAL
RS401 --- RS407
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 4.0 A
SILICON BRIDGE RECTIFIERS
KBU
.935(23.7)
.895(22.6)
.185(4.7)
.165(4.2)
.160(4.1)
.140(3.6)
45
0
Rating to 1000V PRV
Surge overload rating to 150 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
1.0(25.4)Min
.760(19.3)Max
.700(17.8)
.660(16.8)
.280(7.1)
.260(6.6)
.085(2.2)
.065(1.7)
+
+
_
.075(1.9)R.TYP.
(2 PLACES)
~
~
+
.455(11.3)
.405(10.3)
.260(6.6)
.180(4.5)
.205(5.2)
.185(4.7)
.052(1.3)
.048(1.2)
.220(5.6)
.180(4.6)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RS401 RS402 RS403 RS404 RS405 RS406 RS407 UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=25
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
4.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 2.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
150.0
A
V
F
I
R
T
J
T
STG
1.0
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
V
μA
mA
Operating junction temperature range
Storage temperature range
www.galaxycn.com
Document Number 0287018
BL
GALAXY ELECTRICAL
1.

RS407 Related Products

RS407 RS406 RS401 RS402 RS405
Description Bridge Rectifier Diode, 4A, 1000V V(RRM), Bridge Rectifier Diode, 4A, 800V V(RRM), Bridge Rectifier Diode, 4A, 50V V(RRM), Bridge Rectifier Diode, 4A, 100V V(RRM), Bridge Rectifier Diode, 4A, 600V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code unknown unknown unknown unknown unknow
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A
Number of components 4 4 4 4 4
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C
Maximum output current 4 A 4 A 4 A 4 A 4 A
Maximum repetitive peak reverse voltage 1000 V 800 V 50 V 100 V 600 V
surface mount NO NO NO NO NO

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