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2DD2679-13

Description
2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size104KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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2DD2679-13 Overview

2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR

2DD2679-13 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current2 A
Maximum Collector-Emitter Voltage30 V
Processing package descriptionGREEN, PLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingMATTE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor270
Rated crossover frequency240 MHz
2DD2679
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
Please click here to visit our online spice models database.
Features
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Complementary PNP Type (2DB1714) Available
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
NEW PRODUCT
COLLECTOR
2,4
3 E
C 4
2 C
1 B
TOP VIEW
Pin Out Configuration
1
BASE
3
EMITTER
Top View
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
Value
30
30
6
4
2
Unit
V
V
V
A
A
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
Power Dissipation (Note 4) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ T
A
= 25°C
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
P
D
R
θ
JA
T
J
, T
STG
Value
0.9
139
2
62.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
C
obo
f
T
Min
30
30
6
270
Typ
80
11
240
Max
0.1
0.1
370
680
Unit
V
V
V
μA
μA
mV
pF
MHz
Conditions
I
C
= 10μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CB
= 30V, I
E
= 0
V
EB
= 6V, I
C
= 0
I
C
= 1.5A, I
B
= 75mA
V
CE
= 2V, I
C
= 200mA
V
CB
= 10V, I
E
= 0,
f = 1MHz
V
CE
= 2V, I
C
= 100mA,
f = 100MHz
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
1.
2.
3.
4.
5.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB with minimum recommended pad layout.
Device mounted on FR-4 PCB with 1 inch
2
Copper pad layout.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
2DD2679
Document number: DS31629 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated

2DD2679-13 Related Products

2DD2679-13 2DD2679
Description 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3
Transistor polarity NPN NPN
Maximum collector current 2 A 2 A
Maximum Collector-Emitter Voltage 30 V 30 V
Processing package description GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3
Lead-free Yes Yes
EU RoHS regulations Yes Yes
China RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form FLAT FLAT
terminal coating MATTE TIN MATTE TIN
Terminal location SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE SINGLE
Shell connection COLLECTOR COLLECTOR
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor 270 270
Rated crossover frequency 240 MHz 240 MHz
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