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RM11AV

Description
Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,
CategoryDiscrete semiconductor    diode   
File Size161KB,3 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Download Datasheet Parametric Compare View All

RM11AV Overview

Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,

RM11AV Parametric

Parameter NameAttribute value
MakerSANKEN
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1.2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

RM11AV Preview

SANKEN ELECTRIC CO., LTD.
Scope
The present specifications shall apply to an RM11A.
Outline
Type
Structure
Applications
Flammability
UL94V-0 (Equivalent)
Absolute maximum ratings
No.
1
2
3
4
5
6
7
Item
Transient Peak Reverse Voltage
Peak Reverse Voltage
Average Forward Current
Peak Surge Forward Current
I
2
t Limiting Value
Junction Temperature
Storage Temperature
Symbol
V
RSM
V
RM
I
F(AV)
I
FSM
I
2
t
T
j
T
stg
Unit
V
V
A
A
A
2
s
°C
°C
Rating
600
600
1.2
100
50
-40½+150
-40½+150
Silicon Diode
Resin Molded
Commercial Frequency Rectification
RM11A
Conditions
Refer to derating curve
in Section 6
10ms.
Half sine wave, one shot
1ms≦ 10ms
t≦
Electrical characteristics (Ta=25°C, unless otherwise specified)
No.
1
2
3
4
Item
Forward Voltage Drop
Reverse Leakage Current
Reverse Leakage Current Under
High Temperature
Thermal Resistance
Symbol
V
F
I
R
H½I
R
R
th(j-l)
Unit
V
µA
µA
°C/W
Rating
0.92 max.
10 max.
50 max.
15 max.
I
F
=1.5A
V
R
=V
RM
V
R
=V
RM
, T
j
=100°C
Between Junction and Lead
Conditions
050418
1/3
61426-01
SANKEN ELECTRIC CO., LTD.
Derating
Derating to the ambient temperature
Power loss generated by voltage is not taken into consideration.
RM11A
Percentage Against (%)
Ambient Temperature (℃)
050418
2/3
61426-01
SANKEN ELECTRIC CO., LTD.
Package information
7-1Package
type, physical dimensions and material
62.5
±0.7
7.2
±0.2
RM11A
※3
±0.05
φ4.0
±0.2
※1
※2
*1
*2
*3
The allowance position of Body against the center of whole lead wire is 0.5mm(max.)
The centric allowance of lead wire against center of physical body is 0.3mm(max.)
The burr may exit up to 2mm from the body of lead
φ0.78
Dimensions in mm
7-2Appearance
The body shall be clean and shall not bear any stain, rust or flaw.
7-3Marking
Type number:RM11A
Lot number 1
First digit: Last digit of Year
Second digit: Month
From 1 to 9 for Jan. to Sep.
O for Oct., N for Nov., and D for Dec.
Lot number 2 (ten days)
½
Top of the month
½½
Middle of month
½½½
End of month
カ½ード表示
Cathode Band
Cathode Mark
050418
3/3
61426-01

RM11AV Related Products

RM11AV RM11AV1
Description Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon, Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,
Maker SANKEN SANKEN
package instruction O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 100 A 100 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 1.2 A 1.2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
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