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“Standard”:
2.
3.
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5.
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7.
8.
9.
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
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DATA SHEET
SILICON TRANSISTOR
2SA1871
PNP SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
The 2SA1871 is a transistor developed for high-speed high-
voltage switching and is ideal for use in switching elements such
as switching regulators and DC/DC converters.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• New package with dimensions in between those of small signal
and power signal package
• High voltage
• Fast switching speed
• Complementary transistor with 2SC4942
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
Electrode connection
1: Emitter
2: Collector
3: Base
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
P
T
T
j
T
stg
PW
≤
10 ms, duty cycle
≤
50 %
7.5 cm
2
×
0.7 mm ceramic board used
Conditions
Ratings
−600
−600
−7.0
−1.0
−2.0
2.0
150
−55
to +150
Unit
V
V
V
A
A
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16144EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
Embedded System
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