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2SK3062-S

Description
70A, 60V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, FIN CUT, MP-25, TO-262, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size240KB,10 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SK3062-S Overview

70A, 60V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, FIN CUT, MP-25, TO-262, 3 PIN

2SK3062-S Parametric

Parameter NameAttribute value
Parts packaging codeTO-262AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)122.5 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)70 A
Maximum drain current (ID)70 A
Maximum drain-source on-resistance0.012 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)100 W
Maximum pulsed drain current (IDM)280 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

2SK3062-S Related Products

2SK3062-S 2SK3062-ZJ-E1-AZ 2SK3062-ZJ-AZ 2SK3062-Z-E2-AZ 2SK3062-ZJ 2SK3062-ZJ-E2-AZ 2SK3062-Z 2SK3062-AZ 2SK3062
Description 70A, 60V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, FIN CUT, MP-25, TO-262, 3 PIN 2SK3062-ZJ-E1-AZ 2SK3062-ZJ-AZ 2SK3062-Z-E2-AZ 70A, 60V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, TO-263, 3 PIN 2SK3062-ZJ-E2-AZ 70A, 60V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, MP-25Z, TO-220SMD, 3 PIN 2SK3062-AZ 70A, 60V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN
package instruction IN-LINE, R-PSIP-T3 , , , MP-25ZJ, TO-263, 3 PIN , SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow unknow unknow compli unknow unknow compli unknow
Base Number Matches 1 1 1 1 1 1 1 1 1
Parts packaging code TO-262AA - - - D2PAK - TO-220 MP-25 TO-220AB
Contacts 3 - - - 4 - 3 3 3
ECCN code EAR99 - - - EAR99 - EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 122.5 mJ - - - 122.5 mJ - 122.5 mJ 122.5 mJ 122.5 mJ
Shell connection DRAIN - - - DRAIN - DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE - - - SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V - - - 60 V - 60 V 60 V 60 V
Maximum drain current (Abs) (ID) 70 A - - - 70 A - 70 A 70 A 70 A
Maximum drain current (ID) 70 A - - - 70 A - 70 A 70 A 70 A
Maximum drain-source on-resistance 0.012 Ω - - - 0.012 Ω - 0.012 Ω 0.012 Ω 0.012 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - - - METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 - - - R-PSSO-G2 - R-PSSO-G2 R-PSFM-T3 R-PSFM-T3
Number of components 1 - - - 1 - 1 1 1
Number of terminals 3 - - - 2 - 2 3 3
Operating mode ENHANCEMENT MODE - - - ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C - - - 150 °C - 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY - - - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - - - RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE - - - SMALL OUTLINE - SMALL OUTLINE FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL - - - N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 100 W - - - 100 W - 100 W 100 W 100 W
Maximum pulsed drain current (IDM) 280 A - - - 280 A - 280 A 280 A 280 A
Certification status Not Qualified - - - Not Qualified - Not Qualified Not Qualified Not Qualified
surface mount NO - - - YES - YES NO NO
Terminal form THROUGH-HOLE - - - GULL WING - GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - - - SINGLE - SINGLE SINGLE SINGLE
transistor applications SWITCHING - - - SWITCHING - SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - - - SILICON - SILICON SILICON SILICON
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