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DMG4932LSD

Description
ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
File Size192KB,9 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet View All

DMG4932LSD Overview

ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DMG4932LSD
ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
High Density UMOS with Schottky Barrier Diode
Low Leakage Current at High Temp.
High Conversion Efficiency
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Utilizes Diodes’ Monolithic DIOFET Technology to Increase
Conversion Efficiency
100% UIS and R
g
Tested
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Page 8
Ordering Information: See Page 8
Weight: 0.072 grams (approximate)
NEW PRODUCT
Q1
Q2
D
2
Diodes
Schottky
Integrated
MOSFET
D2
D2
G1
S1
Top View
Internal Schematic
G2
S2/D1
S2/D1
S2/D1
G
1
D
1
G
2
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
Top View
Maximum Ratings – Q1
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
T
A
= 25°C
T
A
= 85°C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
30
±12
9.5
7.2
40
13
25.4
Unit
V
V
A
A
A
mJ
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH
I
AR
E
AR
Maximum Ratings – Q2
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
T
A
= 25°C
T
A
= 85°C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
30
±25
9.5
7.5
40
13
25.4
Unit
V
V
A
A
A
mJ
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH
I
AR
E
AR
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 3)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θJA
T
J
,
T
STG
Value
1.19
107
-55 to +150
Unit
W
°C/W
°C
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= 25°C
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
1 of 9
www.diodes.com
August 2010
© Diodes Incorporated
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