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DSS4160U

Description
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size160KB,5 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

DSS4160U Overview

1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR

DSS4160U Parametric

Parameter NameAttribute value
Maximum collector current1 A
Maximum Collector-Emitter Voltage60 V
Number of terminals3
Processing package descriptionGREEN, ULTRA SMALL, PLASTIC PACKAGE-3
each_compliYes
EU RoHS regulationsYes
stateActive
structureSINGLE
Minimum DC amplification factor100
jesd_30_codeR-PDSO-G3
jesd_609_codee3
moisture_sensitivity_level1
Number of components1
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_260
larity_channel_typeNPN
wer_dissipation_max__abs_0.4000 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountYES
terminal coatingMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_40
Transistor component materialsSILICON
Rated crossover frequency150 MHz
DSS4160U
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage, V
CE(SAT)
Complementary PNP Type Available (DSS5160U)
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green Device" (Note 2)
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish
Matte Tin annealed over Copper Plated
Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.006 grams (approximate)
C
NEW PRODUCT
B
Top View
E
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
Value
80
60
5
1
2
300
1
Unit
V
V
V
A
A
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ T
A
= 25°C
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
400
313
-55 to +150
Unit
mW
°C/W
°C
1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
DSS4160U
Document number: DS31684 Rev. 2 - 2
1 of 5
www.diodes.com
March 2009
© Diodes Incorporated

DSS4160U Related Products

DSS4160U DSS4160U-7
Description 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Maximum collector current 1 A 1 A
Maximum Collector-Emitter Voltage 60 V 60 V
Number of terminals 3 3
Processing package description GREEN, ULTRA SMALL, PLASTIC PACKAGE-3 GREEN, ULTRA SMALL, PLASTIC PACKAGE-3
each_compli Yes Yes
EU RoHS regulations Yes Yes
state Active Active
structure SINGLE SINGLE
Minimum DC amplification factor 100 100
jesd_30_code R-PDSO-G3 R-PDSO-G3
jesd_609_code e3 e3
moisture_sensitivity_level 1 1
Number of components 1 1
Maximum operating temperature 150 Cel 150 Cel
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
packaging shape RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE
eak_reflow_temperature__cel_ 260 260
larity_channel_type NPN NPN
wer_dissipation_max__abs_ 0.4000 W 0.4000 W
qualification_status COMMERCIAL COMMERCIAL
sub_category Other Transistors Other Transistors
surface mount YES YES
terminal coating MATTE TIN MATTE TIN
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
ime_peak_reflow_temperature_max__s_ 40 40
Transistor component materials SILICON SILICON
Rated crossover frequency 150 MHz 150 MHz
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