DSS4160U
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage, V
CE(SAT)
Complementary PNP Type Available (DSS5160U)
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green Device" (Note 2)
Mechanical Data
•
•
•
•
•
•
•
•
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish
⎯
Matte Tin annealed over Copper Plated
Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.006 grams (approximate)
C
NEW PRODUCT
B
Top View
E
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
Value
80
60
5
1
2
300
1
Unit
V
V
V
A
A
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ T
A
= 25°C
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
400
313
-55 to +150
Unit
mW
°C/W
°C
1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
DSS4160U
Document number: DS31684 Rev. 2 - 2
1 of 5
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March 2009
© Diodes Incorporated
DSS4160U
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
I
EBO
Min
80
60
5
⎯
⎯
⎯
250
200
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
150
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
63
33
30
420
380
40
Max
⎯
⎯
⎯
100
50
100
100
⎯
⎯
⎯
115
150
280
280
1.1
0.9
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
V
V
nA
μA
nA
nA
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= 150°C
V
CE
= 60V, V
BE
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 500mA
V
CE
= 5V, I
C
= 1A
I
C
= 100mA, I
B
= 1mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 50mA
V
CE
= 5V, I
C
= 1A
V
CB
= 10V, f = 1.0MHz
V
CE
= 10V, I
C
= 50mA, f = 100MHz
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
NEW PRODUCT
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
⎯
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
V
CE(SAT)
R
CE(SAT)
V
BE(SAT)
V
BE(ON)
C
obo
f
T
t
on
t
d
t
r
t
off
t
s
t
f
mV
mΩ
V
V
pF
MHz
ns
ns
ns
ns
ns
ns
V
CC
= 10V
I
C
= 0.5A, I
B1
= I
B2
= 25mA
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
600
500
10
Pw = 1ms
P
D
, POWER DISSIPATION (mW)
I
C
, COLLECTOR CURRENT (A)
1
Pw = 10ms
400
300
0.1
Pw = 100ms
DC
200
0.01
100
0
R
θJA
= 313°C/W
0
0.001
25
50
75
100
125
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Note 3)
150
0.1
1
10
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
DSS4160U
Document number: DS31684 Rev. 2 - 2
2 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DSS4160U
1,000
T
A
= 150°C
V
CE
= 5V
1
I
C
/I
B
= 10
800
h
FE
, DC CURRENT GAIN
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
NEW PRODUCT
600
T
A
= 85°C
400
T
A
= 25°C
0.01
T
A
= -55°C
200
T
A
= -55°C
0
10
100
10,000
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1
0.001
0.1
1,000 10,000
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
V
CE
= 5V
1.2
I
C
/I
B
= 10
1.0
1.0
0.8
T
A
= -55°C
0.8
T
A
= -55°C
0.6
T
A
= 25°C
0.6
T
A
= 25°C
0.4
T
A
= 85°C
0.4
T
A
= 85°C
0.2
0
0.1
T
A
= 150°C
0.2
0
T
A
= 150°C
1
10
100
1,000 10,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.1
1
1,000 10,000
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
180
150
CAPACITANCE (pF)
f = 1MHz
120
90
C
ibo
60
30
0
0.1
C
obo
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
DSS4160U
Document number: DS31684 Rev. 2 - 2
3 of 5
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March 2009
© Diodes Incorporated
DSS4160U
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
NEW PRODUCT
D = 0.9
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 310°C/W
P(pk)
D = 0.02
0.01
D = 0.01
D = 0.005
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
, PULSE DURATION TIME (s)
Fig. 8 Transient Thermal Response (Note 3)
100
1,000
10,000
Ordering Information
Part Number
DSS4160U-7
Notes:
(Note 5)
Case
SOT-323
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
ZN9 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
ZN9
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
Feb
2
2009
W
Mar
3
2010
X
Apr
4
May
5
YM
2011
Y
Jun
6
2012
Z
Jul
7
Aug
8
2013
A
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
Package Outline Dimensions
A
B C
G
H
K
M
J
D
L
SOT-323
Dim
Min
Max
Typ
A
0.25
0.40
0.30
B
1.15
1.35
1.30
C
2.00
2.20
2.10
D
-
-
0.65
G
1.20
1.40
1.30
H
1.80
2.20
2.15
J
0.0
0.10
0.05
K
0.90
1.00
1.00
L
0.25
0.40
0.30
M
0.10
0.18
0.11
0°
8°
-
α
All Dimensions in mm
DSS4160U
Document number: DS31684 Rev. 2 - 2
4 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DSS4160U
Suggested Pad Layout
Y
Z
NEW PRODUCT
C
Dimensions Value (in mm)
Z
2.8
X
0.7
Y
0.9
C
1.9
E
1.0
X
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DSS4160U
Document number: DS31684 Rev. 2 - 2
5 of 5
www.diodes.com
March 2009
© Diodes Incorporated
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