Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD985 2SD986
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SB794/795
・DARLINGTON
・High
DC current gain
・Low
collector saturation voltage
APPLICATIONS
・For
low frequency power amplifier
and power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
固电
导½
半
ANG
2SD985
2SD986
Collector-base voltage
V
CEO
Collector-emitter voltage
CH
IN
SEM
E
Open emitter
Open base
Open collector
CONDITIONS
ON
IC
OR
DUT
VALUE
150
60
V
80
8
±1.5
±3.0
0.15
V
A
A
A
UNIT
V
V
EBO
I
C
I
CM
I
B
Emitter -base voltage
Collector current
Collector current-Peak
Base current
T
a
=25℃
P
T
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
1.0
W
10
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD985 2SD986
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SD985
I
CBO
Collector cut-off current
2SD986
I
EBO
h
FE-1
h
FE-2
Emitter cut-off current
DC current gain
DC current gain
V
CB
=80V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.5A ; V
CE
=2V
I
C
=1.0A ; V
CE
=2V
1000
2000
30000
2.0
mA
CONDITIONS
I
C
=1.0A; I
B
=1.0mA
I
C
=1.0A; I
B
=1.0mA
V
CB
=60V; I
E
=0
10
μA
MIN
TYP.
MAX
1.5
2.0
UNIT
V
V
Switching times
t
on
t
s
t
f
固电
Fall time
Turn-on time
导½
半
Storage time
HAN
INC
L
4000-10000
SEM
GE
I
C
=1.0A;I
B1
=-I
B2
=1.0mA
V
CC
=50V; R
L
=50Ω
ON
IC
OR
DUT
0.5
1.0
1.0
μs
μs
μs
h
FE-2
Classifications
M
2000-5000
K
8000-30000
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD985 2SD986
固电
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
Fig.2 Outline dimensions
3
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