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2SD986L

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size125KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SD986L Overview

Transistor

2SD986L Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD985 2SD986
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SB794/795
・DARLINGTON
・High
DC current gain
・Low
collector saturation voltage
APPLICATIONS
・For
low frequency power amplifier
and power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
固电
导½
ANG
2SD985
2SD986
Collector-base voltage
V
CEO
Collector-emitter voltage
CH
IN
SEM
E
Open emitter
Open base
Open collector
CONDITIONS
ON
IC
OR
DUT
VALUE
150
60
V
80
8
±1.5
±3.0
0.15
V
A
A
A
UNIT
V
V
EBO
I
C
I
CM
I
B
Emitter -base voltage
Collector current
Collector current-Peak
Base current
T
a
=25℃
P
T
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
1.0
W
10
150
-55~150

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Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow
Base Number Matches 1 1 1 1 1 1 1 1
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