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2SD596DV4

Description
Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size288KB,2 Pages
ManufacturerRectron
Environmental Compliance  
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2SD596DV4 Overview

Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

2SD596DV4 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.7 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)265
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz
Base Number Matches1
TECHNICAL SPECIFICATION
SEMICONDUCTOR
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
RECTRON
2SD596
FEATURES
* Power dissipation
P
CM
:
0.2
W (Tamb=25
O
C)
* Collector current
I
CM
:
0.7
A
* Collector-base voltage
V
(BR)CBO
:
30
V
Operating and storage junction temperature range
*
T
J
,T
stg
: -55
O
C to +150
O
C
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
BASE
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
EMITTER
2
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
O
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
o
ELECTRICAL CHARACTERISTICS
( @ TA = 25 C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= 100mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= 1mA, I
B
=0)
Emitter-base breakdown voltage (I
E
= 100mA, I
C
=0)
Collector cut-off current (V
CB
= 30V, I
E
=0)
Emitter cut-off current (V
EB
= 5V, I
C
=0)
DC current gain (V
CE
= 1V, I
C
= 100mA)
DC current gain (V
CE
= 1V, I
C
= 700mA)
Collector-emitter saturation voltage (I
C
= 700mA, I
B
= 70mA)
Base-emitter voltage (V
CE
= 6V, I
C
= 10mA)
Transition frequency (V
CE
= 6V, I
C
= 10mA)
* Pulse teat: Pulse width <350ms, Duty Cycle <2%.
CLASSIFICATION OF h
FE
RANK
Range
DV1
110-180
DV2
135-220
DV3
170-270
DV4
200-320
DV5
250-400
2006-3
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
h
FE(2)
*
V
CE(sat)
*
V
BE(on)
*
f
T
MIN
30
25
5
-
-
110
50
-
0.6
140
TYP
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
0.1
0.1
400
-
0.6
0.7
-
UNITS
V
V
V
mA
mA
-
-
V
V
MHz

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Description Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Transistor Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Transistor Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Transistor Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
package instruction PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 , PLASTIC PACKAGE-3 , PLASTIC PACKAGE-3 , PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Reach Compliance Code compli compli compli compli compli compli compli compli compli
Base Number Matches 1 1 1 1 1 1 1 1 1
Is it lead-free? Lead free Lead free - Lead free - Lead free - Lead free Lead free
Is it Rohs certified? conform to conform to - conform to - conform to - conform to conform to
Contacts 3 3 - 3 - 3 - 3 3
ECCN code EAR99 EAR99 - EAR99 - EAR99 - EAR99 EAR99
Maximum collector current (IC) 0.7 A 0.7 A - 0.7 A - 0.7 A - 0.7 A 0.7 A
Collector-emitter maximum voltage 25 V 25 V - 25 V - 25 V - 25 V 25 V
Configuration SINGLE SINGLE - SINGLE - SINGLE - SINGLE SINGLE
Minimum DC current gain (hFE) 200 110 - 135 - 170 - 250 50
JESD-30 code R-PDSO-G3 R-PDSO-G3 - R-PDSO-G3 - R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 - e3 - e3 - e3 e3
Number of components 1 1 - 1 - 1 - 1 1
Number of terminals 3 3 - 3 - 3 - 3 3
Maximum operating temperature 150 °C 150 °C - 150 °C - 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR - RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE - SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 265 265 - 265 - 265 - 265 265
Polarity/channel type PNP PNP - PNP - PNP - PNP PNP
Certification status Not Qualified Not Qualified - Not Qualified - Not Qualified - Not Qualified Not Qualified
surface mount YES YES - YES - YES - YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) - Matte Tin (Sn) - Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING - GULL WING - GULL WING - GULL WING GULL WING
Terminal location DUAL DUAL - DUAL - DUAL - DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON - SILICON - SILICON - SILICON SILICON
Nominal transition frequency (fT) 140 MHz 140 MHz - 140 MHz - 140 MHz - 140 MHz 140 MHz
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