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2SD596DV3-T

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size288KB,2 Pages
ManufacturerRectron
Download Datasheet Parametric Compare View All

2SD596DV3-T Overview

Transistor

2SD596DV3-T Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
Base Number Matches1
TECHNICAL SPECIFICATION
SEMICONDUCTOR
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
RECTRON
2SD596
FEATURES
* Power dissipation
P
CM
:
0.2
W (Tamb=25
O
C)
* Collector current
I
CM
:
0.7
A
* Collector-base voltage
V
(BR)CBO
:
30
V
Operating and storage junction temperature range
*
T
J
,T
stg
: -55
O
C to +150
O
C
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
BASE
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
EMITTER
2
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
O
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
o
ELECTRICAL CHARACTERISTICS
( @ TA = 25 C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= 100mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= 1mA, I
B
=0)
Emitter-base breakdown voltage (I
E
= 100mA, I
C
=0)
Collector cut-off current (V
CB
= 30V, I
E
=0)
Emitter cut-off current (V
EB
= 5V, I
C
=0)
DC current gain (V
CE
= 1V, I
C
= 100mA)
DC current gain (V
CE
= 1V, I
C
= 700mA)
Collector-emitter saturation voltage (I
C
= 700mA, I
B
= 70mA)
Base-emitter voltage (V
CE
= 6V, I
C
= 10mA)
Transition frequency (V
CE
= 6V, I
C
= 10mA)
* Pulse teat: Pulse width <350ms, Duty Cycle <2%.
CLASSIFICATION OF h
FE
RANK
Range
DV1
110-180
DV2
135-220
DV3
170-270
DV4
200-320
DV5
250-400
2006-3
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
h
FE(2)
*
V
CE(sat)
*
V
BE(on)
*
f
T
MIN
30
25
5
-
-
110
50
-
0.6
140
TYP
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
0.1
0.1
400
-
0.6
0.7
-
UNITS
V
V
V
mA
mA
-
-
V
V
MHz

2SD596DV3-T Related Products

2SD596DV3-T 2SD596DV1 2SD596DV1-T 2SD596DV2 2SD596DV2-T 2SD596DV3 2SD596DV4 2SD596DV5 2SD596
Description Transistor Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Transistor Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Transistor Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
package instruction , PLASTIC PACKAGE-3 , PLASTIC PACKAGE-3 , PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Reach Compliance Code compli compli compli compli compli compli compli compli compli
Base Number Matches 1 1 1 1 1 1 1 1 1
Is it lead-free? - Lead free - Lead free - Lead free Lead free Lead free Lead free
Is it Rohs certified? - conform to - conform to - conform to conform to conform to conform to
Contacts - 3 - 3 - 3 3 3 3
ECCN code - EAR99 - EAR99 - EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) - 0.7 A - 0.7 A - 0.7 A 0.7 A 0.7 A 0.7 A
Collector-emitter maximum voltage - 25 V - 25 V - 25 V 25 V 25 V 25 V
Configuration - SINGLE - SINGLE - SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) - 110 - 135 - 170 200 250 50
JESD-30 code - R-PDSO-G3 - R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code - e3 - e3 - e3 e3 e3 e3
Number of components - 1 - 1 - 1 1 1 1
Number of terminals - 3 - 3 - 3 3 3 3
Maximum operating temperature - 150 °C - 150 °C - 150 °C 150 °C 150 °C 150 °C
Package body material - PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR - RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE - SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 265 - 265 - 265 265 265 265
Polarity/channel type - PNP - PNP - PNP PNP PNP PNP
Certification status - Not Qualified - Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
surface mount - YES - YES - YES YES YES YES
Terminal surface - Matte Tin (Sn) - Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form - GULL WING - GULL WING - GULL WING GULL WING GULL WING GULL WING
Terminal location - DUAL - DUAL - DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials - SILICON - SILICON - SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) - 140 MHz - 140 MHz - 140 MHz 140 MHz 140 MHz 140 MHz
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