DSS2515M
15V NPN LOW V
CE(sat)
TRANSISTOR IN DFN1006
Features
BV
CEO
> 15V
I
C
= 500mA High Collector Current
I
CM
= 1A Peak Pulse Current
P
D
= 1000mW Power Dissipation
Low Collector-Emitter Saturation Voltage, V
CE(sat)
0.60mm
2
Package Footprint, 13 times Smaller than SOT23
0.5mm Height Package Minimizing Off-Board Profile
Complementary PNP Type DSS3515M
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
X1-DFN1006-3
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
NiPdAu,
Solderable per MIL-STD-202, Method 208
e4
Weight: 0.0009 grams (Approximate)
C
B
B
C
E
E
Bottom View
Device Symbol
Top View
Device Schematic
Ordering Information
(Note 4)
Product
DSS2515M-7
DSS2515M-7B
Notes:
Marking
TA
TA
Reel size (inches)
7
7
Tape width (mm)
8mm
8mm
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TA
DSS2515M-7
Top View
Dot Denotes Collector Side
From date code 1527 (YYWW),
this changes to:
TA
Top View
Bar Denotes Base and Emitter Side
TA
TA
TA
DSS2515M-7B
Top View
Bar Denotes Base and Emitter Side
TA = Part Marking Code
TA
TA
TA
DSS2515M
Document number: DS31816 Rev. 4 - 2
1 of 7
www.diodes.com
TA
TA
TA
TA
May 2015
© Diodes Incorporated
DSS2515M
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Peak Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
Value
15
15
6
500
1
100
Unit
V
V
V
mA
A
mA
Thermal Characteristics
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage and Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
Symbol
P
D
R
JA
R
JL
T
J
, T
STG
Value
400
1,000
310
120
120
-55 to +150
Unit
mW
C/W
°C/W
°C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
B
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS2515M
Document number: DS31816 Rev. 4 - 2
2 of 7
www.diodes.com
May 2015
© Diodes Incorporated
DSS2515M
Thermal Characteristics
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
JA
R
JA
= 310°C/W
Duty Cycle, D = t1/ t2
0.0001
0.01
1
t1, PULSE DURATION TIME (sec)
Fig. 1 Transient Thermal Resistance
100
10,000
D = Single Pulse
0.001
0.000001
1,000
P
(PK)
, PEAK TRANSI ENT POI WER (W)
Single Pulse
R
JA
= 310°C/W
100
R
JA(t)
= r
(t)
* R
JA
T
J
- T
A
= P * R
JA(t)
10
1
0.1
1E-06
0.0001
0.01
1
100
10,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
DSS2515M
Document number: DS31816 Rev. 4 - 2
3 of 7
www.diodes.com
May 2015
© Diodes Incorporated
DSS2515M
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min
15
15
6
200
150
90
250
Typ
Max
100
50
100
25
150
250
500
1.1
0.9
6
Unit
V
V
V
nA
µA
nA
Test Condition
I
C
= 100µA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CB
= 15V, I
E
= 0
V
CB
= 15V, I
E
= 0, T
A
= +150°C
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 10mA
V
CE
= 2V, I
C
= 100mA
V
CE
= 2V, I
C
= 500mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 200mA, I
B
= 10mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 2V, I
C
= 100mA
V
CB
= 10V, f = 1.0MHz
V
CE
= 5V, I
C
= 100mA, f = 100MHz
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 9)
DC Current Gain
h
FE
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Note:
V
CE(sat)
R
CE(sat)
V
BE(sat)
V
BE(on)
C
obo
f
T
mV
mΩ
V
V
pF
MHz
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
DSS2515M
Document number: DS31816 Rev. 4 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated
DSS2515M
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1.0
800
700
T
A
= 150°C
I
C
, COLLECTOR CURRENT (A)
0.8
I
B
= 5mA
I
B
= 4mA
h
FE
, DC CURRENT GAIN
600
500
400
300
200
100
T
A
= 125°C
T
A
= 85°C
0.6
I
B
= 3mA
I
B
= 2mA
T
A
= 25°C
0.4
I
B
= 1mA
T
A
= -55°C
0.2
0
0
1
2
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
0
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
1
1
I
C
/I
B
= 20
1.2
I
C
/I
B
= 20
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
1.0
0.8
T
A
= -55°C
0.1
0.6
T
A
= 25°C
T
A
= 85°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0.4
T
A
= 150°C
T
A
= 125°C
0.01
0.1
T
A
= -55°C
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V
CE
= 2V
0.2
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
I
C
/I
B
= 20
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
1,000
1.0
-R
CE(SAT)
, COLLECTOR-EMITTER
SATURATION RESISTANCE (
)
100
0.8
T
A
= -55°C
10
0.6
T
A
= 25°C
0.4
T
A
= 125°C
T
A
= 150°C
T
A
= 85°C
1
T
A
= -55°C
T
A
= 25°C
T
A
= 85°C
T
A
= 125°C
T
A
= 150°C
0.2
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.1
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 9 Typical Collector-Emitter Saturation Resistance
vs. Collector Current
DSS2515M
Document number: DS31816 Rev. 4 - 2
5 of 7
www.diodes.com
May 2015
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
