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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3664
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK3664 is a switching device, which can be driven directly
by a 2.5 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
1.6 ± 0.1
0.8 ± 0.1
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
3
0 to 0.1
2
0.2
+0.1
–0
0.5
0.5
0.6
0.75 ± 0.05
1
FEATURES
•
2.5 V drive available
•
Low on-state resistance
R
DS(on)1
= 0.57
Ω
MAX. (V
GS
= 4.5 V, I
D
= 0.3 A)
R
DS(on)2
= 0.60
Ω
MAX. (V
GS
= 4.0 V, I
D
= 0.3 A)
R
DS(on)3
= 0.88
Ω
MAX. (V
GS
= 2.5 V, I
D
= 0.15 A)
ORDERING INFORMATION
PART NUMBER
2SK3664
PACKAGE
SC-75 (USM)
1.0
1.6 ± 0.1
1: Source
2: Gate
3: Drain
Marking: G1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation
Channel Temperature
Storage Temperature
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
20
±12
±0.5
±2.0
0.2
150
−55
to +150
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2
2.
Mounted on ceramic substrate of 300 mm x 0.64 mm
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with
caution for electrostatic discharge.
V
ESD
= ±200 V TYP. (C = 200 pF, R = 0
Ω
, Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16599EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2003
51mcu
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