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Datasheet> All Categories > Analog mixed-signal IC> Trigger device> BCR12PM-12
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BCR12PM-12

Description
TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB, TO-220F, 3 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size152KB，11 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

BCR12PM-12 Overview

TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB, TO-220F, 3 PIN

BCR12PM-12 Parametric

Parameter NameAttribute value
MakerMitsubishi
Parts packaging codeTO-220F
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Shell connectionISOLATED
ConfigurationSINGLE
Critical rise rate of commutation voltage - minimum value10 V/us
Maximum DC gate trigger current30 mA
Maximum DC gate trigger voltage1.5 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum leakage current2 mA
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current12 A
Off-state repetitive peak voltage600 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device typeTRIAC

BCR12PM-12 Preview

MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR12PM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12PM
OUTLINE DRAWING
10.5 MAX
5.2
Dimensions
in mm
2.8
17
5.0
1.2
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
13.5 MIN
3.6
1.3 MAX
0.8
2.54
2.54
8.5
0.5
2.6
•
•
•
•
•
I
T (RMS)
...................................................................... 12A
V
DRM
....................................................................... 600V
I
FGT
!
, I
RGT
!
, I
RGT
#
............................................ 20mA
V
iso
........................................................................ 2000V
UL Recognized: Yellow Card No.E80276(N)
File No. E80271
123
2
∗
Measurement point of
case temperature
1
1
T
1
TERMINAL
2
T
2
TERMINAL
3 3
GATE TERMINAL
TO-220F
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit, hair driver,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, solenoid drivers, small motor control,
copying machine, electric tool
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
½1
Non-repetitive peak off-state
voltage
½1
Voltage class
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
V
iso
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Typical value
4.5
Conditions
Commercial frequency, sine full wave 360° conduction, T
c
=74°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
12
120
60
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
2000
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
T
a
=25°C, AC 1 minute, T
1
· T
2
· G terminal to case
½1.
Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR12PM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
½4
Parameter
Repetitive peak off-state current
On-state voltage
!
Gate trigger voltage
½2
@
#
!
Gate trigger
current
½2
@
#
T
j
=125°C, V
D
=1/2V
DRM
Junction to
T
j
=125°C
case
½3
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=20A, Instantaneous measurement
Min.
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
20
20
20
—
3.5
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/
W
V/µs
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
—
—
—
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
—
—
0.2
—
10
½2.
Measurement using the gate trigger characteristics measurement circuit.
½3.
The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
½4.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in he table below.
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
T
j
=125°C
2. Rate of decay of on-state commutating current
(di/dt)
c
=–6.0A/ms
3. Peak off-state voltage
V
D
=400V
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
TIME
V
D
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
SURGE ON-STATE CURRENT (A)
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
ON-STATE CURRENT (A)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
T
j
= 125°C
T
j
= 25°C
10
–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR12PM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
(Ι,
ΙΙ
AND
ΙΙΙ)
100 (%)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
TYPICAL EXAMPLE
GATE VOLTAGE (V)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
10
2
7
5
3
2 V
GM
= 10V
10
1
7
5
3
2
10
0
7
5
3
2
V
GD
= 0.2V
I
RGT I
I
FGT I,
I
RGT III
10
–1
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
GATE CURRENT (mA)
P
GM
= 5W
P
G(AV)
=
0.5W
V
GT
= 1.5V
I
GM
= 2A
I
RGT I,
I
RGT III
I
FGT I
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
TYPICAL EXAMPLE
TRANSIENT THERMAL IMPEDANCE (°C/W)
10
2
2 3 5 7 10
3
2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (°C/W)
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
10
3
NO FINS
16
14
12 360°
CONDUCTION
10 RESISTIVE,
INDUCTIVE
8 LOADS
6
4
2
0
0
2
4
6
8
10
12
14
16
10
2
10
1
10
0
10
–1
10
1
2 3 5 7
10
2
2 3 5 7
10
3
2 3 5 7
10
4
2 3 5 7
10
5
CONDUCTION TIME
(CYCLES AT 60Hz)
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR12PM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CASE TEMPERATURE (°C)
140
120
100
80
60
AMBIENT TEMPERATURE (°C)
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
120 120 t2.3
100
100 100 t2.3
80
60 NO FINS
RESISTIVE,
40 INDUCTIVE
LOADS
20 NATURAL
CONVECTION
0
2
4
6
0
60 60 t2.3
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
2
4
6
0
8
10
12
14
16
8
10
12
14
16
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7 TYPICAL EXAMPLE
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
LACHING CURRENT VS.
JUNCTION TEMPERATURE
100 (%)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
LACHING CURRENT (mA)
DISTRIBUTION
+
T
2
, G
–
TYPICAL
EXAMPLE
10
0
–40
+
T
2
, G
+
TYPICAL
½
–
T
2
, G
–
EXAMPLE
0
40
80
120
160
JUNCTION TEMPERATURE (°C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR12PM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
140
TYPICAL EXAMPLE
T
j
= 125°C
100 (%)
160
TYPICAL EXAMPLE
140
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
120
100
III QUADRANT
80
60
40
20
I QUADRANT
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
7
TYPICAL
5
EXAMPLE
3 T
j
= 125°C
2 I
T
= 4A
τ
= 500µs
V
D
= 200V
10
1
f = 3Hz
7
5
MINIMUM
3 CHARAC-
2 TERISTICS
VALUE
10
0
7
10
0
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
V
D
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
100 (%)
TYPICAL EXAMPLE
I
FGT I
I
RGT I
I
RGT III
I QUADRANT
III QUADRANT
2 3
5 7 10
1
2 3
5 7 10
2
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
V
A
R
G
6V
V
A
R
G
TEST PROCEDURE
1
6Ω
TEST PROCEDURE
2
6V
V
A
R
G
TEST PROCEDURE
3
Mar. 2002
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