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2SB1149L

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size123KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SB1149L Overview

Transistor

2SB1149L Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1149
DESCRIPTION
・With
TO-126 package
・DARLINGTON
・High
DC current gain
・Low
collector saturation voltage
APPLICATIONS
・For
use in operating from IC without
predriver ,such as hammer driver
PINNING(See Fig.2)
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
固电
IN
导½
Collector-emitter voltage
Emitter-base voltage
ANG
CH
Open emitter
MIC
E SE
CONDITIONS
OR
UCT
ND
O
VALUE
-100
-100
-8
-3.0
-5.0
UNIT
V
V
V
A
A
Open base
Open collector
Collector current (DC)
Collector current-peak
T
a
=25℃
1.3
W
15
150
-55~150
P
D
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature

2SB1149L Related Products

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Description Transistor Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow unknow
Base Number Matches 1 1 1 1
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