Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1149
DESCRIPTION
・With
TO-126 package
・DARLINGTON
・High
DC current gain
・Low
collector saturation voltage
APPLICATIONS
・For
use in operating from IC without
predriver ,such as hammer driver
PINNING(See Fig.2)
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
固电
IN
导½
半
Collector-emitter voltage
Emitter-base voltage
ANG
CH
Open emitter
MIC
E SE
CONDITIONS
OR
UCT
ND
O
VALUE
-100
-100
-8
-3.0
-5.0
UNIT
V
V
V
A
A
Open base
Open collector
Collector current (DC)
Collector current-peak
T
a
=25℃
1.3
W
15
150
-55~150
℃
℃
P
D
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-1.5A ;I
B
=-1.5mA
I
C
=-1.5A ;I
B
=-1.5mA
V
CB
=-100V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1.5A ; V
CE
=-2V
I
C
=-3A ; V
CE
=-2V
2000
1000
MIN
TYP.
-0.9
-1.5
2SB1149
MAX
-1.2
-2.0
-10
-2.0
15000
UNIT
V
V
μA
mA
Switching times
t
on
t
stg
t
f
Turn-on time
固电
Fall time
Storage time
导½
半
L
K
0.5
I
C
=-1.5A ; I
B1
=-I
B2
=-1.5mA
V
CC
≈-40V;R
L
=27Ω
μs
h
FE-1
Classifications
M
2000-5000
IN
ANG
CH
MIC
E SE
DUC
ON
2.0
1.0
OR
T
μs
μs
3000-7000
5000-15000
2
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