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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3113
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3113 is N-channel DMOS FET device that features
a low gate charge and excellent switching characteristic, and
designed for high voltage applications such as switching
power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
2SK3113
2SK3113-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
•
Low on-state resistance
R
DS(on)
= 4.4
Ω
MAX. (V
GS
= 10 V, I
D
= 1.0 A)
•
Low gate charge
Q
G
= 9 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 2.0 A)
•
Gate voltage rating
±30
V
•
Avalanche capability ratings
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
Note2
600
±30
±2.0
±8.0
20
1.0
150
–55 to +150
2.0
2.7
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
P
T2
T
ch
T
stg
I
AS
E
AS
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 40 mm
×
40 mm
×
1.6 mm
3.
Starting T
ch
= 25°C, V
DD
= 150 V
,
R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13336EJ4V0DS00 (4th edition)
Date Published August 2006 NS CP(K)
Printed in Japan
1998, 2001
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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