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2SB1151

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size181KB,4 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SB1151 Overview

Transistor

2SB1151 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SD1691
・Low
saturation voltage
・Large
current
・High
total power dissipation:P
T
=1.3W
・Large
current capability and wide SOA
APPLICATIONS
・DC-DC
converter
・Driver
of solenoid or motor
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
2SB1151
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
固电
导½
ANG
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-60
-60
-7
-5
-8
-1
UNIT
V
V
V
A
A
A
CH
IN
Base current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
a
=25℃
P
D
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
1.3
W
20
150
-55~150

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Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1
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