Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SD1691
・Low
saturation voltage
・Large
current
・High
total power dissipation:P
T
=1.3W
・Large
current capability and wide SOA
APPLICATIONS
・DC-DC
converter
・Driver
of solenoid or motor
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
2SB1151
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
固电
导½
半
ANG
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-60
-60
-7
-5
-8
-1
UNIT
V
V
V
A
A
A
CH
IN
Base current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
a
=25℃
P
D
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
1.3
W
20
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
CONDITIONS
I
C
=-2.0A ;I
B
=-0.2A
I
C
=-2.0A ;I
B
=-0.2A
V
CB
=-50V; I
E
=0
V
EB
=-7V; I
C
=0
I
C
=-0.1A ; V
CE
=-1V
I
C
=-2A ; V
CE
=-1V
I
C
=-5A ; V
CE
=-2V
60
100
50
MIN
TYP.
2SB1151
MAX
-0.3
-1.2
-10
-10
UNIT
V
V
μA
μA
400
Switching times
t
on
t
stg
t
f
固电
Fall time
Turn-on time
导½
半
MIC
E SE
I
C
=-2A; I
B1
=-I
B2
=-0.2A
R
L
=5.0Ω;V
CC
≈10V
Storage time
h
FE-2
Classifications
M
100-200
L
IN
ANG
CH
K
200-400
DUC
ON
0.15
0.78
0.18
OR
T
1.0
2.5
1.0
μs
μs
μs
160-320
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1151
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1151
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
4
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