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2SD882EGP

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size116KB,4 Pages
ManufacturerCHENMKO
Websitehttp://www.chenmko.com/
Download Datasheet Parametric Compare View All

2SD882EGP Overview

Transistor,

2SD882EGP Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
CHENMKO ENTERPRISE CO.,LTD
SMALL FLAT
NPN Epitaxial Transistor
VOLTAGE 30 Volts
APPLICATION
* Power driver and Dc to DC convertor .
2SD882GP
CURRENT 3 Ampere
FEATURE
* Small flat package. (SC-62/SOT-89)
* Low saturation voltage V
CE(sat)
=0.5V(max.)(I
C
=2A)
* High speed switching time: t
stg
= 1.0uSec (typ.)
* PC= 1.5 W (mounted on ceramic substrate).
* High saturation current capability.
4.6MAX.
1.7MAX.
SC-62/SOT-89
1.6MAX.
0.4+0.05
2.5+0.1
+0.08
0.45-0.05
+0.08
0.40-0.05
1.50+0.1
+0.08
0.40-0.05
1.50+0.1
* NPN Switching Transistor
MARKING
*
hFE Classification Q: Q82
P: P82
E: 882
1
1 Base
2
3
CIRCUIT
2 Collector ( Heat Sink )
3 Emitter
0.8MIN.
4.6MAX.
CONSTRUCTION
1
B
2
C
3
E
Dimensions in millimeters
SC-62/SOT-89
MAXIMUM RATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current DC
Peak Collector Current
Peak Base Current
Total Power Dissipation
Storage Temperature
Junction Temperature
Operating Ambient Temperature
T
A
25
O
C; Note 1
CONDITION
Open Emitter
Open Base
Open Collector
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
TOT
T
STG
T
J
T
AMB
MIN.
-
-
-
-
-
-
-
-55
-
-55
MAX.
40
30
5
3
3
0.5
1500
+150
+150
+150
UNITS
Volts
Volts
Volts
Amps
Amps
Amps
mW
o
C
C
C
o
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2003-8

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Description Transistor, Transistor, Transistor,
Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1
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