DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ557
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SJ557 is a switching device which can be driven directly
by a 4 V power source.
The 2SJ557 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.4
+0.1
–0.05
0.16
+0.1
–0.06
0.65
–0.15
+0.1
2.8 ±0.2
3
1.5
0 to 0.1
1
2
FEATURES
•
Can be driven by a 4 V power source
•
Low on-state resistance
R
DS(on)1
= 155 mΩ MAX. (V
GS
= –10 V, I
D
= –1.0 A)
R
DS(on)2
= 255 mΩ MAX. (V
GS
= –4.5 V, I
D
= –1.0 A)
R
DS(on)3
= 290 mΩ MAX. (V
GS
= –4.0 V, I
D
= –1.0 A)
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9 ±0.2
1 : Gate
2 : Source
3 : Drain
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-96 (Mini Mold Thin Type)
5
2SJ557
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
Note2
–30
–20 / +5
±2.5
±10
0.2
1.25
150
–55 to +150
V
V
A
A
W
W
°C
°C
Gate
Gate
Protection
Diode
Marking: XB
Body
Diode
Source
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2.
Mounted on FR-4 Board, t
≤
5 sec.
Remark
P
T2
T
ch
T
stg
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13292EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1998, 1999
2SJ557
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
DS
= –30 V, V
GS
= 0 V
V
GS
= ±16 V, V
DS
= 0 V
V
DS
= –10 V, I
D
= –1 mA
V
DS
= –10 V, I
D
= –1.5 A
V
GS
= –10 V, I
D
= –1.0 A
V
GS
= –4.5 V, I
D
= –1.0 A
V
GS
= –4.0 V, I
D
= –1.0 A
V
DS
= –10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= –10 V
I
D
= –1.0 A
V
GS(on)
= –10 V
R
G
= 10
Ω
V
DD
= –10 V
I
D
= –2.5 A
V
GS
= –4.0 V
I
F
= 2.5 A, V
GS
= 0 V
I
F
= 2.5 A, V
GS
= 0 V
di/dt = 50 A /
µ
s
–1.0
1
–1.7
2.5
114
178
212
312
117
56
12
7
133
85
2.8
1.0
1.2
0.84
28
7.8
155
255
290
MIN.
TYP.
MAX.
–10
±10
–2.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
R
G
= 10
Ω
V
DD
I
D
90 %
90 %
I
D
0 10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
10 %
t
f
V
GS
I
G
= 2 mA
V
GS(on)
90 %
V
GS
Wave Form
R
L
V
DD
0
10 %
PG.
50
Ω
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
I
D
Wave Form
2
Data Sheet D13292EJ2V0DS
2SJ557
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
5
−100
FORWARD BIAS SAFE OPERATING AREA
dT - Derating Factor - %
I
D
- Drain Current - A
−10
R V
(@
I
D
(pulse)
)
L 1
(on
=
−
DS GS
d
ite )
im 0 V
PW
60
I
D
(
DC
)
=1
−1
40
5s
10
ms
10
0m
s
ms
20
−0.1
Single Pulse
Mounted on FR-4 Board of
50mm x 50mm x 1.6mm
0
30
60
120
90
T
A
- Ambient Temperature -
˚C
150
−0.01
−0.1
−1
−10
−100
V
DS
- Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
−10
−1
V
GS(off)
- Gate to Source Cut-off Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
−2.0
V
DS
=
−10
V
I
D
=
−1
mA
V
DS =
−10
V
I
D
- Drain Current - A
−1.8
−0.1
−0.01
−0.001
T
A
= 125˚C
75˚C
25˚C
−
25˚C
−1.6
−1.4
−0.0001
−0.00001
0
−1
−2
−3
−4
−5
−1.2
−50
0
50
100
150
V
GS
- Gate to Sorce Voltage - V
T
ch
- Channel Temperature - ˚C
R
DS(on)
- Drain to Source On-State Resistance - mΩ
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
100
| y
fs
| - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
500
V
GS
=
−4.0
V
V
DS
=
−10V
10
T
A
=
−25
˚C
25
˚C
400
1
75
˚C
125
˚C
300
T
A
= 125˚C
75˚C
0.1
200
25˚C
−
25˚C
0.01
−0.01
−0.1
−1
−10
100
−0.01
−0.1
−1
−10
I
D
- Drain Current - A
I
D
- Drain Current - A
Data Sheet D13292EJ2V0DS
3
2SJ557
R
DS(on)
- Drain to Source On-State Resistance - mΩ
500
R
DS(on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
V
GS
=
−4.5
V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
250
V
GS
=
−10
V
400
200
300
T
A
= 125˚C
150
T
A
= 125˚C
75˚C
25˚C
−25˚C
200
75˚C
25˚C
−25˚C
100
100
−0.01
−0.1
−1
−10
50
−0.01
−0.1
−1
−10
I
D
- Drain Current - A
I
D
- Drain Current - A
R
DS (on)
- Drain to Source On-state Resistance - mΩ
350
I
D
=
−1.0
A
300
250
200
150
100
50
−50
T
ch
−10
V
V
GS
=
−4.0
V
−4.5
V
R
DS (on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
500
I
D
=
−1.0
A
400
300
200
100
0
0
50
100
- Channel Temperature -˚C
150
0
−
4
−
8
−
12
−
16
−
20
V
GS
- Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
C
iss
, C
oss
, C
rss
- Capacitance - pF
SWITCHING CHARACTERISTICS
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
f = 1 MHz
V
GS
= 0V
C
iss
t
d(off)
100
t
f
t
r
100
C
oss
C
rss
t
d(on)
10
V
DD
=
−10
V
V
GS
(
on
) =
−10
V
R
G
= 10
Ω
−1
I
D
- Drain Current - A
−10
10
−1
−10
V
DS
- Drain to Source Voltage - V
−100
1
−0.1
4
Data Sheet D13292EJ2V0DS
2SJ557
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
I
F
- Source to Drain Current - A
DYNAMIC INPUT CHARACTERISTICS
−10
V
GS
- Gate to Source Voltage - V
I
D
=
−2.5
A
−8
−6
1
V
DD
=
−10
V
−6
V
−4
−2
0.1
0.01
0.4
0
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
F(S-D)
- Source to Drain Voltage - V
Q
G
- Gate Charge - nC
5
1000
r
th(ch-A)
- Transient Thermal Resistance - ˚C/W
Single Pulse
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Without Board
100
Mounted on 250 mm
2
x 35
µ
m
Copper Pad
Connected to Drain Electrode
in 50 mm x 50 mm x 1.6 mm
FR-4 Board
10
1
0.001
0.01
0.1
1
10
PW - Pulse Width - S
100
1000
Data Sheet D13292EJ2V0DS
5
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