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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3456
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3456 is N-channel DMOS FET device that
features a low gate charge and excellent switching
characteristics, designed for high voltage applications such
as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
2SK3456
2SK3456-S
2SK3456-ZJ
PACKAGE
TO-220AB
TO-262
TO-263
FEATURES
•
Low gate charge
Q
G
= 30 nC TYP. (V
DD
= 400 V, V
GS
= 10 V, I
D
= 12 A)
•
Gate voltage rating
±30
V
•
Low on-state resistance
R
DS(on)
= 0.60
Ω
MAX. (V
GS
= 10 V, I
D
= 6.0 A)
•
Avalanche capability ratings
•
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C
)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (Pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
500
±30
±12
±36
1.5
100
150
−55
to +150
12
103
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14753EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
©
2000
TI Technology Forum
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