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Datasheet> All Categories > Discrete semiconductor> diode> BAV99_D87Z
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BAV99_D87Z

Description
Rectifier Diode, 2 Element, 0.2A, 70V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size192KB，6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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BAV99_D87Z Overview

Rectifier Diode, 2 Element, 0.2A, 70V V(RRM), Silicon

BAV99_D87Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
package instructionR-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresULTRA FAST
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.35 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage70 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

BAV99_D87Z Preview

BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode
April 2014
BAV99
200 mA 70 V High Conductance Ultra-Fast Switching
Diode
Features
•
•
•
•
High Conductance: I
F
= 200 mA
Fast Switching Speed: t
rr
< 6 ns Maximum
Small Plastic SOT-23 Package
Series-Pair Configuration
Description
The BAV99 is a 350 mW high-speed switching diode
array with series-pair diode configuration. It achieves
high-current conductivity, up to 200 mA, in a very small
7mm
2
footprint. These features make the BAV99 optimal
for area-constrained applications that need a little extra
power capability.
For common cathode and common anode high-speed
switching diodes, explore Fairchild's BAV70 and BAW56.
Looking for more options in the SOT-23 package? Check
Fairchild's MMBD family.
Applications
• High-Speed Switching Applications
Connection Diagram
3
3
3
2
1
A7
2
1
2
1
SOT-23
Ordering Information
Part Number
BAV99
BAV99_D87Z
Marking
A7
A7
Package
SOT-23 3L
SOT-23 3L
Packing Method
Tape and Reel, Reel 7 inch
Tape and Reel, Reel 13 inch
© 2001 Fairchild Semiconductor Corporation
BAV99 Rev. 1.1.0
1
www.fairchildsemi.com
BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
RRM
I
F(AV)
I
FSM
T
STG
T
J
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-Repetitive Peak
Forward Surge Current
Pulse Width = 1.0 Second
Pulse Width = 300 Microseconds
Value
70
200
1.0
8.0
-55 to +150
-55 to +150
Unit
V
mA
A
°C
°C
Storage Temperature Range
Operating Junction Temperature Range
Note:
1. These ratings are based on a maximum junction temperature of 150°C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations.
Thermal Characteristics
(2)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
Power Dissipation
Parameter
Thermal Resistance, Junction to Ambient
Value
350
357
Unit
mW
°C/W
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
R
Parameter
Breakdown Voltage, per Diode
Conditions
I
R
= 100
μA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
R
= 70 V
Min.
70
Max.
715
855
1.00
1.25
2.5
30.0
50.0
1.5
6.0
Unit
V
mV
V
V
F
Forward Voltage, per Diode
I
R
C
T
t
rr
Reverse Leakage, per Diode
Total Capacitance, per Diode
Reverse-Recovery Time,
per Diode
V
R
= 25 V, T
A
= 150°C
V
R
= 70 V, T
A
= 150°C
V
R
= 0 V, f = 1.0 MHz
I
F
= I
R
= 10 mA,
I
RR
= 1 mA,
R
L
= 100
Ω
μA
pF
ns
© 2001 Fairchild Semiconductor Corporation
BAV99 Rev. 1.1.0
2
www.fairchildsemi.com
BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode
Typical Performance Characteristics
150
Ta= 25
°
C
300
Ta= 25
°
C
Reverse Current, I
R
[nA]
1
2
3
5
10
20
30
50
100
Reverse Voltage, V
R
[V]
140
250
200
130
150
100
120
50
110
0
10
20
30
50
70
100
Reverse Current, I
R
[uA]
Reverse Voltage, V
R
[V]
Figure 1. Reverse Voltage vs. Reverse Current
Figure 2. Reverse Current vs. Reverse Voltage
Ta= 25
°
C
450
700
Ta= 25
°
C
Forward Voltage, V
F
[mV]
Forward Voltage, V
F
[mV]
650
400
600
350
550
300
500
250
450
1
2
3
5
10
20
30
50
100
0.1
0.2
0.3
0.5
1
2
3
5
10
Forward Current, I
F
[uA]
Forward Current, I
F
[mA]
Figure 3. Forward Voltage vs. Forward Current
V
F
- 1 to 100
μA
Figure 4. Forward Voltage vs. Forward Current
V
F
- 0.1 to 10 mA
1.3
Ta= 25
°
C
1.4
Ta= 25
°
C
Forward Voltage, V
F
[V]
Total Capacitance [pF]
10
20
30
50
100
200
300
500
1.2
1.2
1.0
1.1
0.8
0.6
1.0
0
2
4
6
8
10
12
14
Forw ard C urrent, I
F
[m A ]
R everse V oltage [V ]
Figure 5. Forward Voltage vs. Forward Current
V
F
- 10 to 800 mA
Figure 6. Total Capacitance vs. Reverse Voltage
© 2001 Fairchild Semiconductor Corporation
BAV99 Rev. 1.1.0
3
www.fairchildsemi.com
BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode
Typical Performance Characteristics
(Continued)
4.0
Reverse Recovery Time [ns]
Ta= 25
°
C
400
3.5
300
2.5
Current [mA]
3.0
200
I
F
(A V
)
-A
VE
RA
2.0
GE
RE
CT
100
IF IE
1.5
DC
UR
RE
NT
-m
A
1.0
10
20
30
40
50
60
0
0
50
100
o
150
Reverse Current [mA]
Ambient Temperature, T
A
[ C]
Figure 7. Reverse-Recovery Time vs.
Reverse Current
500
Figure 8. Average Rectified Current (I
F(AV)
) vs.
Ambient Temperature (T
A
)
Power Dissipation, P
D
[mW]
400
300
SOT-23 Pkg
200
100
0
0
25
50
75
100
125
o
150
175
200
Average Tem perature, [ C]
Figure 9. Power Derating Curve
© 2001 Fairchild Semiconductor Corporation
BAV99 Rev. 1.1.0
4
www.fairchildsemi.com
BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode
Physical Dimensions
SOT-23
2.92±0.20
3
1.40
0.95
1.30+0.20
-0.15
2.20
1
(0.29)
0.95
1.90
2
0.60
0.37
0.20
A B
1.90
LAND PATTERN
RECOMMENDATION
1.00
1.20 MAX
(0.93)
SEE DETAIL A
0.10
0.00
0.10
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
C
GAGE PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
0.23
0.08
0.25
0.20 MIN
(0.55)
SEATING
PLANE
SCALE: 2X
Figure 10. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.
© 2001 Fairchild Semiconductor Corporation
BAV99 Rev. 1.1.0
5
www.fairchildsemi.com
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