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BZT55C4V3L0

Description
Zener Diode, 4.3V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-213AA, ROHS COMPLIANT, HERMETIC SEALED, GLASS, LS34, QUADRO MINIMELF-2
CategoryDiscrete semiconductor    diode   
File Size361KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BZT55C4V3L0 Overview

Zener Diode, 4.3V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-213AA, ROHS COMPLIANT, HERMETIC SEALED, GLASS, LS34, QUADRO MINIMELF-2

BZT55C4V3L0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionO-LELF-R2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance75 Ω
JEDEC-95 codeDO-213AA
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage4.3 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current5 mA
CREAT BY ART
BZT55C2V4 - BZT55C75
500mW, 5% Tolerance SMD Zener Diode
Small Signal Product
Features
Wide zener voltage range selection : 2.4V to 75V
V
Z
tolerance selection of ±5%
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
All external surfaces are corrosion resistant and
leads are readily solderable
QUADRO Mini-MELF (LS34)
Hermetically Sealed Glass
Mechanical Data
Case : QUADRO Mini-MELF Package (JEDEC DO-213)
High temperature soldering guaranteed : 270
o
C/10s
Polarity : Indicated by cathode band
Weight : 29 ± 2.5mg
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Maximum Ratings
Parameter
Power Dissipation
Forward Voltage
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
Note : Valid provided that electrodes are kept at ambient temperature.
I
F
=10mA
(Note 1)
Symbol
P
D
V
F
R
θJA
T
J
, T
STG
Value
500
1.0
500
-65 to +175
Unit
mW
V
o
C/W
o
C
Zener I vs. V Characteristics
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Document Number:DS_S1308005
Version : E13
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