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BAL99E6433

Description
Rectifier Diode, 1 Element, Silicon
CategoryDiscrete semiconductor    diode   
File Size38KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
Download Datasheet Parametric Compare View All

BAL99E6433 Overview

Rectifier Diode, 1 Element, Silicon

BAL99E6433 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionR-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresTR, 7 INCH; 3000
applicationGENERAL PURPOSE
Minimum breakdown voltage85 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current4.5 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.37 W
Certification statusNot Qualified
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage80 V
Maximum reverse current1 µA
Maximum reverse recovery time0.004 µs
Reverse test voltage70 V
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40

BAL99E6433 Preview

BAL99
Silicon Switching Diode
For high-speed switching applications
3
Total power dissipation,
T
S
= 54 °C
Junction temperature
Storage temperature
Thermal Resistance
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1

Junction - soldering point
1)


2
1
3
VPS05161
2
EHA00002
Type
BAL99
Maximum Ratings
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Marking
JFs
Pin Configuration
1 = n.c.
2=C
3=A
Package
SOT23
Symbol
V
R
V
RM
I
F
I
FS
P
tot
T
j
T
stg
Value
70
70
250
4.5
370
150
-65 ... 150
Unit
V
mA
A
mW
°C
Surge forward current, t = 1 s
R
thJS
260
K/W
Jul-27-2001
BAL99
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC characteristics
Breakdown voltage
I
(BR)
= 100 µA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
Reverse current
V
R
= 70 V
Reverse current
V
R
= 25 V,
T
A
= 150 °C
V
R
= 70 V
AC characteristics
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
Reverse recovery time
t
rr
,
-
-
6
C
D
-
-
1.5
Unit
max.
-
V
mV
typ.
-
V
(BR)
V
F
-
-
-
-
-
I
R
I
R
-
-
-
-
-
-
-
-
715
855
1000
1250
2.5
µA
-
-
30
50
pF
ns
Test circuit for reverse recovery time
D.U.T.
Ι
F
Oscillograph
2



Pulse generator:
t
p
= 100ns,
D
= 0.05,
t
r
= 0.6ns,
R
i
= 50

I
F
= 10 mA,
I
R
= 10 mA,
R
L
= 100
measured at
I
R
= 1mA
EHN00014
Oscillograph:
R
= 50 ,
t
r
= 0.35ns,
C
1pF
Jul-27-2001
BAL99
Forward current
I
F
=
f
(T
S
)
Reverse current
I
R
=
f
(T
A
)
300
10
5
nA
BAL 99
EHB00007
mA
Ι
R
10
4
V
R
= 70 V
max.
200
5
I
F
150
10
3
5
70V
25V
100
10
2
50
typ.
5
0
0
15
30
45
60
75
90 105 120
°C
150
10
1
0
50
100
T
A
˚C
150
T
S
Forward current
I
F
=
f
(V
F
)
T
A
= 25°C
150
BAL 99
EHB00008
Peak forward current
I
FM
=
f
(t
p
)
T
A
= 25°C
10
2
BAL 99
EHB00009
Ι
F
mA
Ι
FM
A
10
1
D
= 0.005
0.01
0.02
0.05
0.1
0.2
100
typ
max
10
0
50
10
-1
t
p
D
=
T
t
p
T
0
0
0.5
1.0
V
V
F
1.5
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
t
3
Jul-27-2001
BAL99
Forward voltage
V
F
=
f
(T
A
)
1.0
V
BAL 99
EHB00010
V
F
Ι
F
= 100 mA
10 mA
1 mA
0.1 mA
0.5
0
0
50
100
T
A
˚C
150
4
Jul-27-2001

BAL99E6433 Related Products

BAL99E6433 BAL99E6327
Description Rectifier Diode, 1 Element, Silicon Rectifier Diode, 1 Element, Silicon
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
package instruction R-PDSO-G3 R-PDSO-G3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features TR, 7 INCH; 3000 TR, 7 INCH; 3000
application GENERAL PURPOSE GENERAL PURPOSE
Minimum breakdown voltage 85 V 85 V
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.25 V 1.25 V
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Maximum non-repetitive peak forward current 4.5 A 4.5 A
Number of components 1 1
Phase 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Maximum output current 0.25 A 0.25 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Maximum power dissipation 0.37 W 0.37 W
Certification status Not Qualified Not Qualified
Guideline AEC-Q101 AEC-Q101
Maximum repetitive peak reverse voltage 80 V 80 V
Maximum reverse current 1 µA 1 µA
Maximum reverse recovery time 0.004 µs 0.004 µs
Reverse test voltage 70 V 70 V
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40

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