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ER800_09

Description
8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size78KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ER800_09 Overview

8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC

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ER800~ER806
SUPERFAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
50 to 600 Volts
CURRENT
8.0 Amperes
• Superfast recovery times-epitaxial construction.
• Low forward voltage, high current capability.
• Exceeds environmental standards of MIL-S-19500/228.
• Hermetically sealed.
• Low leakage.
• High surge capability.
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• In compliance with EU RoHS 2002/95/EC directives
.058(1.47)
.042(1.07)
MECHANICALDATA
• Case: Molded plastic, TO-220AC
• Terminals: Axial leads, solderable to MIL-STD-750,Method 2026
• Polarity: As marking
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Resistive or inductive load, 60Hz.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt a t T
C
= 7 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt , 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 8 . 0 A ( N o t e 1 )
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng Vo l t a g e T
J
= 1 0 0
O
C
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 1 )
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 2 )
Ty p i c a l t h e r m a l R e s i s t a n c e ( N o t e 3 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
NOTES:
S YM B O L
E R 8 0 0 E R 8 0 1 E R 8 0 1 A E R 8 0 2 E R 8 0 3 E R 8 0 4 E R 8 0 6
U N I T S
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
t
rr
C
J
R
θ
J C
T
J
, T
S T G
35
65
3 .0
-5 5 to +1 5 0
O
50
35
50
100
70
100
150
105
150
200
140
200
8 .0
125
300
210
300
400
280
400
600
420
600
V
V
V
A
A
0 .9 5
1 .0
300
1 .3
1 .7
V
µ
A
50
ns
pF
C / W
O
C
1. Pulse Test with PW=300 usec, 2% Duty Cycle.
2. Reverse Recovery Tset Conditions:I
F
=0.5A,I
R
=1.0A,Irr=0.25A
3. Mounted on P.C. Board with 14mm2 (.013mm thick) copper pad areas.
STAD-MAR.06.2009
PAGE . 1
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