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2SC3209-L

Description
200mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size167KB,3 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

2SC3209-L Overview

200mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR

2SC3209-L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Maximum off time (toff)3000 ns
Maximum opening time (tons)2000 ns
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