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2SK3356-AZ

Description
75A, 60V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, MP-88, TO-3P, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size68KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SK3356-AZ Overview

75A, 60V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, MP-88, TO-3P, 3 PIN

2SK3356-AZ Parametric

Parameter NameAttribute value
Parts packaging codeTO-3P
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)302 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.012 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)300 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3356
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3356 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3356
PACKAGE
TO-3P
FEATURES
Super low on-state resistance:
R
DS(on)1
= 8.0 mΩ MAX. (V
GS
= 10 V, I
D
= 38 A)
R
DS(on)2
= 12 mΩ MAX. (V
GS
= 4 V, I
D
= 38 A)
Low C
iss
: C
iss
= 6300 pF TYP.
Built-in gate protection diode
(TO-3P)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS(AC)
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
Note2
60
±20
±75
±300
135
3.0
150
–55 to +150
55
302
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
I
AS
E
AS
Note2
Notes 1.
PW
10
µ
s, Duty cycle
1 %
2.
Starting T
ch
= 25°C, V
DD
= 30 V
,
R
G
= 25
Ω,
V
GS
= 20 V
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14133EJ3V0DS00 (3rd edition)
Date Published March 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1999, 2000

2SK3356-AZ Related Products

2SK3356-AZ
Description 75A, 60V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, MP-88, TO-3P, 3 PIN
Parts packaging code TO-3P
package instruction FLANGE MOUNT, R-PSFM-T3
Contacts 3
Reach Compliance Code unknow
ECCN code EAR99
Avalanche Energy Efficiency Rating (Eas) 302 mJ
Shell connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V
Maximum drain current (ID) 75 A
Maximum drain-source on-resistance 0.012 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3
Number of components 1
Number of terminals 3
Operating mode ENHANCEMENT MODE
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Maximum pulsed drain current (IDM) 300 A
Certification status Not Qualified
surface mount NO
Terminal form THROUGH-HOLE
Terminal location SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications SWITCHING
Transistor component materials SILICON
Base Number Matches 1
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