PACDN042
Transient Voltage
Suppressors and ESD
Protectors
Product Description
The PACDN042/43/44/45/46 family of transient voltage suppressor
arrays provide a very high level of protection for sensitive electronic
components that may be subjected to electrostatic discharge (ESD).
The PACDN042/43/44/45/46 devices safely dissipate ESD strikes,
exceeding the IEC 61000−4−2 International Standard, Level 4 (±8 kV
contact discharge). All pins are rated to withstand
±20
kV ESD pulses
using the IEC 61000−4−2 contact discharge method. Using the
MIL−STD−883D (Method 3015) specification for Human Body
Model (HBM) ESD, all pins are protected from contact discharges of
greater than
±30
kV.
Features
http://onsemi.com
SOT23−3
CASE 318
SOT23−5
CASE 527AH
SOT23−6
CASE 527AJ
•
Two, Three, Four, Five, or Six Transient Voltage Suppressors
•
Compact SMT Package Saves Board Space and Facilitates Layout
in Space−Critical Applications
•
In−System ESD Protection to
±
20 kV Contact Discharge, per the
IEC 61000−4−2 International Standard
•
These Devices are Pb−Free and are RoHS Compliant
Applications
SOT−143
CASE 527AF
SC70−3
CASE 419AB
CS70−5
CASE 419AC
SC70−6
CASE 419AD
TSSOP8
CASE 948AL
MSOP8
CASE 846AB
•
ESD Protection of PC Ports, Including USB Ports, Serial Ports,
MARKING DIAGRAM
Parallel Ports, IEEE1394 Ports, Docking Ports, Proprietary Ports,
etc.
•
Protection of Interface Ports or IC Pins which are Exposed to
High ESD Levels
XXX MG
G
1
XXX
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
(see the last page of this document)
©
Semiconductor Components Industries, LLC, 2013
December, 2013
−
Rev. 6
1
Publication Order Number:
PACDN042/D
PACDN042
ELECTRICAL SCHEMATIC
PACDN042
GND
3
PACDN043
4
3
8
PACDN044T
GND
GND
6
5
7
1
SOT23−3
SC70−3
PACDN044Y
5
2
1
GND
SOT−143
2
1
GND
3
GND
TSSOP−8
2
4
PACDN045
4
6
5
4
GND
8
PACDN046
7
6
5
1
2
GND
SOT23−5
SC70−5
3
1
2
GND
SOT23−6
SC70−6
3
1
GND
2
3
4
MSOP−8
PACKAGE / PINOUT DIAGRAMS
Top View
TVS
Cathode
1
052
3
GND
TVS
Cathode
2
3−Pin SC70
TVS
Cathode
Top View
1
D52
3
GND
TVS
Cathode
2
GND
Top View
1
D053
TVS
Cathode
4
TVS
Cathode
TVS
Cathode
2
3−Pin SOT23
3
4−Pin SOT−143
Top View
TVS
Cathode
GND
TVS
Cathode
1
D054
4
TVS
Cathode
TVS
Cathode
TVS
Cathode
TVS
Cathode
2
3
5
TVS
Cathode
TVS
Cathode
GND
TVS
Cathode
Top View
1
D54
4
TVS
Cathode
2
3
5
TVS
Cathode
GND
TVS
Cathode
GND
TVS
Cathode
1
2
Top View
8
TVS
Cathode
GND
TVS
Cathode
GND
PAC
7
DN054T
3
6
4
5
5−Pin SOT23
5−Pin SC70
8−Pin TSSOP
Top View
TVS
Cathode
GND
TVS
Cathode
1
D055
2
3
6
5
4
TVS
Cathode
GND
TVS
Cathode
Top View
1
D55/D56
2
3
6
5
4
TVS
Cathode
TVS
Cathode
TVS
Cathode
GND
TVS
Cathode
TVS
Cathode
TVS
Cathode
1
2
3
4
Top View
8
7
6
5
D056
GND
TVS
Cathode
TVS
Cathode
TVS
Cathode
6−Pin SOT23
6−Pin SC70
8−Pin MSOP
Note: SOT23, SC70, SOT−143, TSSOP, and MSOP Packages may differ in size. These drawings are not to scale.
http://onsemi.com
2
PACDN042
Table 1. PIN DESCRIPTIONS
Pins
(Refer to Package Outline Drawings)
(Refer to Package Outline Drawings)
Name
TVS Cathode
GND
Description
The cathode of the respective TVS diode, which should be connected to the
node requiring transient voltage protection.
The anode of the TVS diodes.
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature Range
Package Power Dissipation
SC70
SOT23−3, SOT23−5, SOT23−6, SOT−143
TSSOP, MSOP
Rating
−65
to +150
0.2
0.225
0.5
Units
°C
W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature
Rating
−40
to +85
Units
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS
Symbol
C
V
RSO
I
LEAK
V
SIG
Capacitance
Reverse Stand−off Voltage
Parameter
Conditions
T
A
= 25°C, 2.5 VDC, 1 MHz
I
R
= 10
mA,
T
A
= 25°C
I
R
= 1 mA, T
A
= 25°C
Leakage Current
Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
ESD Withstand Voltage
Human Body Model, MIL−STD−883,
Method 3015
Contact Discharge per IEC 61000−4−2
Standard
Diode Dynamic Resistance
Forward Conduction
Reverse Conduction
V
IN
= 5.0 VDC, T
A
= 25°C
I = 10 mA, T
A
= 25°C
I =
−10
mA, T
A
= 25°C
(Note 1)
(Note 1)
6.2
−0.4
±30
±20
W
5.5
6.1
1
6.8
−0.8
100
8
−1.2
Min
Typ
30
Max
Units
pF
V
V
nA
V
V
ESD
kV
R
D
1.0
1.4
1. ESD voltage applied between channel pins & ground, one pin at a time; all other channel pins open; all GND pins grounded.
http://onsemi.com
3
PACDN042
PERFORMANCE INFORMATION
Diode Capacitance
Typical diode capacitance with respect to positive TVS cathode voltage (reverse voltage across the diode) is given in Diode
Capacitance vs. Reverse Voltage.
Figure 1. Diode Capacitance vs. Reverse Voltage
Typical High Current Diode Characteristics
Measurements are made in pulse mode with a nominal pulse width of 0.7 mS.
Figure 2. Typical Input VI Characteristics
(Pulse−mode measurements, pulse width = 0.7 mS nominal)
http://onsemi.com
4
PACDN042
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
SEE VIEW C
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
q
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
°
E
1
2
HE
c
e
b
q
0.25
A
A1
L
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm
inches
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
