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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3571
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3571 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
5
ORDERING INFORMATION
PART NUMBER
2SK3571
2SK3571-S
2SK3571-ZK
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
•4.5V
drive available.
•Low
on-state resistance,
R
DS(on)1
= 9.0 mΩ MAX. (V
GS
= 10 V, I
D
= 24 A)
•Low
gate charge
Q
G
= 21 nC TYP. (V
DD
= 16 V, V
GS
= 10 V, I
D
= 48 A)
•Built-in
gate protection diode
•Surface
mount device available
2SK3571-Z
Note
TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
±20
±48
±192
1.5
40
150
−55
to +150
V
V
A
A
W
W
°C
°C
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Note
PW
≤
10
µ
s, Duty Cycle
≤
1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16257EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP (K)
Printed in Japan
The mark
!
shows major revised points.
©
2002
Power technology
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