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EDI88512CA35B32B

Description
Standard SRAM, 512KX8, 35ns, CMOS, CDSO32,
Categorystorage    storage   
File Size208KB,8 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric View All

EDI88512CA35B32B Overview

Standard SRAM, 512KX8, 35ns, CMOS, CDSO32,

EDI88512CA35B32B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerEDI [Electronic devices inc.]
Reach Compliance Codeunknown
Maximum access time35 ns
Other featuresTTL COMPATIBLE INPUTS/OUTPUTS
I/O typeCOMMON
JESD-30 codeR-CDSO-G32
JESD-609 codee0
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of ports1
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX8
Output characteristics3-STATE
ExportableYES
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeSOP
Encapsulate equivalent codeSOP32,.56
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum standby current0.025 A
Minimum standby current4.5 V
Maximum slew rate0.225 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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