a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
Document Number: 66700
S10-1046-Rev. A, 03-May-10
www.vishay.com
1
New Product
Si8800EDB
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
=
4.5 V, I
D
= 1.0 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
=
2.5 V, I
D
= 1.0 A
V
GS
=
1.8 V, I
D
= 1.0 A
V
GS
=
1.5 V, I
D
= 0.5 A
Forward Transconductance
Dynamic
b
a
Symbol
Test Conditions
Min.
20
Typ.
Max.
Unit
V
18
- 2.3
0.4
1.0
± 0.5
±6
1
10
10
0.066
0.072
0.082
0.095
10
5.5
3.2
0.42
0.5
1.0
65
130
170
1800
700
50
80
2200
700
0.7
15
1.0
13
5
8
5
1.5
25
10
85
900
350
25
8.3
5.0
0.080
0.090
0.105
0.150
mV/°C
V
µA
A
Ω
g
fs
V
DS
= 10 V, I
D
= 1.0 A
V
DS
= 10 V, V
GS
= 8 V, I
D
= 1.0 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 1.0 A
f = 1 MHz
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1.0 A, V
GEN
= 4.5 V, R
g
= 1
Ω
S
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
nC
kΩ
ns
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1.0 A, V
GEN
= 8 V, R
g
= 1
Ω
40
1100
350
T
C
= 25 °C
I
S
= 1.0 A, V
GS
=
0 V
A
V
ns
nC
ns
I
F
= 1.0 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 66700
S10-1046-Rev. A, 03-May-10
New Product
Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1.5
10
-1
1.2
I
GSS
- Gate Current (mA)
T
J
= 25 °C
0.9
I
GSS
- Gate Current (A)
10
-3
10
-5
T
J
= 150 °C
10
-7
T
J
= 25 °C
0.6
0.3
10
-9
0.0
0
3
6
9
12
15
10
-11
0
3
6
9
12
15
V
GS
- Gate-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
15
V
GS
= 5 V thru 2 V
12
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4
5
Gate Current vs. Gate-Source Voltage
9
V
GS
= 1.5 V
3
6
2
T
C
= 25 °C
1
T
C
= 125 °C
3
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
T
C
= - 55 °C
0.3
0.6
0.9
1.2
1.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.15
V
GS
- Gate-to-Source Voltage (V)
8
I
D
= 1 A
R
DS(on)
- On-Resistance (Ω)
0.12
V
GS
= 1.5 V
0.09
V
GS
= 2.5 V
0.06
V
GS
= 4.5 V
0.03
V
GS
= 1.8 V
6
Transfer Characteristics
V
DS
= 5 V
V
DS
= 10 V
4
V
DS
= 16 V
2
0.00
0
3
6
9
12
15
0
0
1
2
3
4
5
6
I
D
- Drain Current (A)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Drain Current
Gate Charge
Document Number: 66700
S10-1046-Rev. A, 03-May-10
www.vishay.com
3
New Product
Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1.5
1.4
R
DS(on)
- On-Resistance
1.3
(Normalized)
1.2
1.1
1.0
0.9
0.8
0.7
- 50
0.1
0.0
V
GS
= 1.5 V; I
D
= 0.5 A
V
GS
= 4.5 V, V
GS
= 2.5 V, V
GS
= 1.8 V; I
D
= 1 A
10
I
S
- Source Current (A)
T
J
= 150 °C
T
J
= 25 °C
1
- 25
0
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
0.14
0.8
Source-Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.12
I
D
= 1.5 A; T
J
= 125 °C
V
GS(th)
(V)
0.10
0.7
0.6
I
D
= 250 μA
0.5
0.08
I
D
= 1.5 A; T
J
= 25 °C
0.06
I
D
= 0.5 A; T
J
= 125 °C
0.4
I
D
= 0.5 A; T
J
= 25 °C
0.3
0.04
0
1
2
3
4
5
0.2
- 50
- 25
0
25
50
75
100
125
150
V
GS
- Gate-to-Source Voltage (V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
14
12
10
Power (W)
8
6
4
2
0
0.001
Threshold Voltage
0.01
0.1
1
Time (s)
10
100
1000
Single Pulse Power (Junction-to-Ambient)
www.vishay.com
4
Document Number: 66700
S10-1046-Rev. A, 03-May-10
New Product
Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
Limited by R
DS(on)
*
I
D
- Drain Current (A)
10
100 μs
1
1 ms
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 ms, 1 s
10 s, DC
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
3.0
0.8
2.5
I
D
- Drain Current (A)
Power Dissipation (W)
0.6
2.0
1.5
0.4
1.0
0.2
0.5
0.0
0
25
50
75
100
125
150
0.0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
T
A
- Ambient Temperature (°C)
Current Derating*
Note:
When mounted on 1" x 1" FR4 with full copper.
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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