PreliminaryData
Sheet
2SC3356
FEATURES
R09DS0021EJ0300
Rev.3.00
NPN Silicon RF Transistor
Jun 28, 2011
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
• Low noise and high gain : NF = 1.1 dB TYP., G
a
= 11 dB TYP. @ V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
• High power gain : MAG = 13 dB TYP. @ V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
<R>
ORDERING INFORMATION
Part Number
2SC3356
2SC3356-T1B
Order Number
2SC3356-A
2SC3356-T1B-A
Package
3-pin Minimold
(Pb-Free)
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
Remark
To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
12
3.0
100
200
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free air
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0021EJ0300 Rev.3.00
Jun 28, 2011
Page 1 of 7
2SC3356
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
f
T
⏐S
21e
⏐
NF
C
re
Note 2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 10 V, I
E
= 0
V
EB
= 1.0 V, I
C
= 0
V
CE
= 10 V, I
C
= 20 mA
–
–
50
–
–
120
1.0
1.0
250
μ
A
μ
A
–
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
V
CB
= 10 V, I
E
= 0, f = 1 MHz
–
–
–
−
7
11.5
1.1
0.55
–
–
2.0
1.0
GHz
dB
dB
pF
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
<R>
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
Q/YQ
R23
50 to 100
R/YR
R24
80 to 160
S/YS
R25
125 to 250
R09DS0021EJ0300 Rev.3.00
Jun 28, 2011
Page 2 of 7
2SC3356
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
f = 1 MHz
250
Total Power Dissipation P
tot
(mW)
Free air
200
150
1
100
0.5
50
0
25
50
75
100
125
150
0.3
0.2
0.5
1
2
5
10
20 30
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
V
CE
= 10 V
5
V
CE
= 10 V
DC Current Gain h
FE
100
2
1
0.5
50
20
0.2
0.1
0.1
10
0.5
1
5
10
50
0.5
1
5
10
50 100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
15
Insertion Power Gain |S
21e
|
2
(dB)
25
MAG
20
|S
21e
|
2
15
V
CE
= 10 V
f = 1 GHz
10
10
5
5
V
CE
= 10 V
I
C
= 20 mA
0
0.05
0.1
0.2
0.5
1
2
0
0.5
1
5
10
50 70
Frequency f (GHz)
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
R09DS0021EJ0300 Rev.3.00
Jun 28, 2011
Page 3 of 7
2SC3356
NOISE FIGURE vs.
COLLECTOR CURRENT
7
6
Noise Figure NF (dB)
NOISE FIGURE, INSERTION POWER GAIN
vs. COLLECTOR TO EMITTER VOLTAGE
5
f = 1 GHz
I
C
= 20 mA
Noise Figure NF (dB)
4
|S
21e
|
2
3
12
5
4
3
2
1
0
0.5
1
5
10
50 70
9
2
NF
1
6
3
0
10
0
2
4
6
8
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
Remark
The graphs indicate nominal characteristics.
R09DS0021EJ0300 Rev.3.00
Jun 28, 2011
Page 4 of 7
Insertion Power Gain |S
21e
|
2
(dB)
V
CE
= 10 V
f = 1 GHz
15
2SC3356
SMITH CHART
S
11e
, S
22e
-FREQUENCY
CONDITION : V
CE
= 10 V, 200 MHz Step
0
.09
0.6
0.
0.
0. 06
44
0.
5
07
43
0.
0
13
1.6
12
0.7
8
0.0 2
0.4
0.9
1.0
0.8
1.2
0.4
1
0.10
0.40
110
0.11
0.39
100
0.12
0.38
0.13
0.37
90
0.14
0.36
80
0.15
0.35
70
1.4
0.1
6
0.3
4
0
60
1.8
0.1
0.3
7
3
0.
2 .0
0.2
50
0.
18
32
19
0.
3 1
0.
0.0
0 .4
5
5
POS
14
ITIV
0
ER
EA
CT
+
A
–– JX
NCE
Z
O
––
CO
M
PO
N
T
EN
0.4
0
0.2 0
0.3
40
WAVELE
NGTH
S
0.02
TOWARD
0.0
GENE
0.48
.47
3
RA
0
W
FLECTION
COEFFCIENT
0.4
0.0
TOR
6
IN
DE
7
.03
THS
TO
GLE
OF
RE
0
NG
4
GRE
AN
0.4
0.4
ES
0
4
ELE
−
160
6
0.0
AV
W
15
0
)
(
0.01
0.49
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
0
0.49
0.48
0.01
2
RD
LOAD
0.0
A
0.1
0.4
0.6
S
22e
8
0.
T
NEN
PO
OM
EC
NC
TA
X –
AC
−
J –
O
RE
––Z
E
IV
AT
50
)
−
1
0.3
(
5
0.4
5
0.0
44
0.
06
40
0.
−
1
0.
4
I
C
= 5 mA
0.
1.6
5
0.
2.0
0.6
0.8
0.9
1.2
1.4
1.0
S
21e
-FREQUENCY
CONDITION : V
CE
= 10 V, I
C
= 20 mA
90˚
120˚
0.2 GHz
60˚
S
12e
-FREQUENCY
CONDITION : V
CE
= 10 V, I
C
= 20 mA
90˚
120˚
2.0 GHz
60˚
150˚
S
21e
30˚
150˚
180˚
2.0 GHz
5
10
15
20
0˚ 180˚
–150˚
–30˚
–150˚
–120˚
–90˚
–60˚
–120˚
–90˚
R09DS0021EJ0300 Rev.3.00
Jun 28, 2011
32
4
0.3
6
3
0.1
0.3
7
0.1
60
−
0.7
1.8
3.
0
0.2 GHz
18
0
−
5
5.0
4.0
0.
0.35
0.15
−
70
0.36
0.14
−
80
1.0
I
C
= 20 mA
0.8
0.6
1.
0
0.2
I
C
= 5 mA
0.2 GHz
20
50
REACTANCE COMPONENT
R
––––
0.2
Z
O
(
)
10
0.37
0.13
0.4
0.4
S
11e
0
1.
2.0 GHz I
C
= 20 mA
0.8
0.6
0.2
0.2
−
90
0.38
0.39
0.12
0.11
−
100
0.40
0
.10
−
11
0
0.4
1
0.0
0.4
9
0
2
−
1
.08
0.
20
4
0.
3
0
−
1
7
30
NE
G
0.
4
0.6
3.
0.8
0
1
0.2
9
0.2
30
0.3
4.0
0
1.
6.0
0.24
0.23
0.26
2
0.2
0.27
8
10
0.2
20
2.0 GHz
0.2
10
0.1
20
50
0.25
0.25
0
0.3
0.2
0
0
0.
3
−
4
0.1
1
0
9
0.26
0.27
0.24
0
.28
0.23
0
−
10
0.2
.22
9
−
20
0.2
1
−
3
0
S
12e
30˚
0.2 GHz
0.05
0.1
0.15
0.2 0.25
0˚
–30˚
–60˚
Page 5 of 7
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