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HER0805GC

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size266KB,3 Pages
ManufacturerFagor Electrónica
Download Datasheet Parametric Compare View All

HER0805GC Overview

Rectifier Diode,

HER0805GC Parametric

Parameter NameAttribute value
MakerFagor Electrónica
Reach Compliance Codecompliant
ECCN codeEAR99

HER0805GC Preview

HER0803G ........ HER0808G
8.0 Amp. Glass Passivated Ultrafast Rectifiers
Voltage
200 V to 1000 V
Current
8.0 A
TO-220AB
1
23
• Glass passivated chip junction.
• High efficiency, Low VF
• High current capability
• High reliability
• High surge current capability
• For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
MECHANICAL DATA
PIN 1
PIN 3
CASE
PIN 2
Common Cathode
Suffix "C"
• Cases: TO-220AB Molded plastic
• Epoxy: UL 94V0 rate flame retardant
• Terminals: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
• Polarity: As marked
• High temperature soldering guaranteed:
260 °C/10 seconds, 4.06mm from case.
• Weight: 2.24 grams
Absolute Maximum Ratings, according to IEC publication No. 134
HER
0803G
200
140
200
HER
0805G
400
280
400
HER
0806G
600
420
600
8.0 A
HER
0807G
800
560
800
HER
0808G
1000
700
1000
V
RRM
V
RMS
V
DC
I
F(AV)
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Maximum Average Forward Rectified Current
@ T
c
= 100 °C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC Method)
I
FSM
T
rr
C
j
T
j
T
stg
125 A
Maximum Reverse Recovery Time from
I
F
= 0.5A; I
R
= 1A; I
RR
= 0.25A
Typical Junction Capacitance at 1 MHz
and reverse voltage of 4V
DC
Operating Temperature Range
Storage Temperature Range
50 nS
80 pF
-65 to +150 °C
-65 to +150 °C
80 nS
50 pF
Electrical Characteristics
V
F
I
R
R
thj-c
Maximum Instantaneous Forward Voltage @ 4.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T
A
= 25 °C
@ T
A
=125 °C
1.0 V
1.3 V
10 µA
400 µA
3.0 °C/W
1.7 V
Typical Thermal Resistance (See note)
NOTE: Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
Sep - 09
HER08G
Rating And Charasterictic Curves
MAXIMUM FORWARD CURRENT DERATING
CURVE
I
F(AV)
, average forward current (A)
10
TYPICAL FORWARD CHARACTERISTICS
I
F
, instantaneous forward current (A)
100
30
10
3
1
0.3
0.1
0.03
0.01
0.4
0.6
0.8
1.0
1.2
T
j
= 25 °C
Pulse Width = 300 µs
1% Duty Cycle
8
R0
HE
03
G
8
6
4
2
0
0
50
100
150
8
R0
HE
8G
080
ER
G-H
806
R0
HE
05
G
1.4
1.6
1.8
V
F
, forward voltage (V)
T
L
, lead temperature (°C)
MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
I
FSM
, peak forward surge current (A)
150
240
8.3ms Single Half Sine Wawe
JEDEC Method
TYPICAL JUNCTION CAPACITANCE
C
j
, junction capacitance (pF)
125
100
75
200
160
120
80
40
0
HE
R0
HE
R0
80
6G
80
3G
-H
ER
08
05
G
50
25
1
2
5
10
20
50
100
-H
ER
08
08
G
1
2
5
10
20
50
100 200
500 1000
Number of cycles at 60 Hz
V
R
, reverse voltage (V)
TYPICAL REVERSE CHARACTERISTICS
I
R
, Instantaneous reverse current (µA)
1000
REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
T
j
= 125 °C
50Ω
NON INDUCTIVE
10Ω
NON INDUCTIVE
trr
+0.5A
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
100
10
T
j
= 75 °C
(+)
50vDC
(APPROX)
(-)
DUT
0
-0.25A
1
T
j
= 25 °C
1Ω
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
-1.0A
NOTES: 1. Rise Time = 7ns max. Input Impedance =
1 megohm 22 pf
2. Rise Time = 10 ns max. Sourse Impedance =
50 ohms
1cm
SET TIME BASE FOR
5/ 10ns/ cm
0.1
0
20
40
60
80
100
120
140
Percent of rated peak reverse voltage (%)
Sep - 09
HER08G
10.0 Amp. Glass Passivated Ultrafast Recovery Rectifier
PACKAGE MECHANICAL DATA
TO-220AB
REF.
A
B
C
D
E
F
G
L2
L3
L4
L5
L7
DIA
DIMENSIONS
Milimeters
Max.
Min.
4.44
1.14
2.54
0.35
--
0.68
2.41
13.46
14.90
2.62
3.56
5.84
3.74
4.70
1.40
2.79
0.64
10.5
0.94
2.67
14.22
15.10
2.87
4.06
6.86
3.91
Sep - 09

HER0805GC Related Products

HER0805GC HER0805G HER0806G HER0808G HER0808GC HER0803G HER0807G
Description Rectifier Diode, Rectifier Diode, 1 Phase, 2 Element, 8A, 400V V(RRM), Silicon, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Rectifier Diode, 1 Phase, 2 Element, 8A, 600V V(RRM), Silicon, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Rectifier Diode, 1 Phase, 2 Element, 8A, 1000V V(RRM), Silicon, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Rectifier Diode, Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Rectifier Diode, 1 Phase, 2 Element, 8A, 800V V(RRM), Silicon, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Maker Fagor Electrónica Fagor Electrónica Fagor Electrónica Fagor Electrónica Fagor Electrónica Fagor Electrónica Fagor Electrónica
Reach Compliance Code compliant compliant compliant compliant compliant compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Parts packaging code - TO-220AB TO-220AB TO-220AB - TO-220AB TO-220AB
package instruction - R-PSFM-T3 LEAD FREE, PLASTIC PACKAGE-3 R-PSFM-T3 - LEAD FREE, PLASTIC PACKAGE-3 LEAD FREE, PLASTIC PACKAGE-3
Contacts - 3 3 3 - 3 3
Other features - FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY - FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY
application - EFFICIENCY EFFICIENCY EFFICIENCY - EFFICIENCY EFFICIENCY
Shell connection - CATHODE CATHODE CATHODE - CATHODE CATHODE
Configuration - COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS - COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials - SILICON SILICON SILICON - SILICON SILICON
Diode type - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code - TO-220AB TO-220AB TO-220AB - TO-220AB TO-220AB
JESD-30 code - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3
JESD-609 code - e3 e3 e3 - e3 e3
Maximum non-repetitive peak forward current - 125 A 125 A 125 A - 125 A 125 A
Number of components - 2 2 2 - 2 2
Phase - 1 1 1 - 1 1
Number of terminals - 3 3 3 - 3 3
Maximum operating temperature - 150 °C 150 °C 150 °C - 150 °C 150 °C
Minimum operating temperature - -65 °C -65 °C -65 °C - -65 °C -65 °C
Maximum output current - 8 A 8 A 8 A - 8 A 8 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
Certification status - Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified
Maximum repetitive peak reverse voltage - 400 V 600 V 1000 V - 200 V 800 V
Maximum reverse recovery time - 0.05 µs 0.08 µs 0.08 µs - 0.05 µs 0.08 µs
surface mount - NO NO NO - NO NO
Terminal surface - PURE TIN PURE TIN PURE TIN - PURE TIN PURE TIN
Terminal form - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE SINGLE - SINGLE SINGLE

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