TA20121603DH datasheet, PDF - EEWORLD Datasheet

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TA20121603DH: DescriptionSilicon Controlled Rectifier, 2500A I(T)RMS, 1600000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TA2, 3 PIN; CategoryAnalog mixed-signal IC Trigger device; File Size482KB，4 Pages; ManufacturerPOWEREX; Websitehttp://www.pwrx.com/Home.aspx; Environmental Compliance

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TA20121603DH Overview

Silicon Controlled Rectifier, 2500A I(T)RMS, 1600000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TA2, 3 PIN

TA20121603DH Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	POWEREX
package instruction	DISK BUTTON, O-CEDB-N2
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Nominal circuit commutation break time	250 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	300 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
JESD-30 code	O-CEDB-N2
Maximum leakage current	100 mA
On-state non-repetitive peak current	29000 A
Number of components	1
Number of terminals	2
Maximum on-state current	1600000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	2500 A
Off-state repetitive peak voltage	1200 V
Repeated peak reverse voltage	1200 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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Description	Silicon Controlled Rectifier, 2500A I(T)RMS, 1600000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TA2, 3 PIN	Silicon Controlled Rectifier, 2500A I(T)RMS, 1600000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TA2, 3 PIN	Silicon Controlled Rectifier, 2500A I(T)RMS, 1600000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, TA2, 3 PIN	Silicon Controlled Rectifier, 2500A I(T)RMS, 1600000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, TA2, 3 PIN	Silicon Controlled Rectifier, 2512A I(T)RMS, 1600000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TA2, 3 PIN	Silicon Controlled Rectifier, 2512A I(T)RMS, 1600000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TA2, 3 PIN	Silicon Controlled Rectifier, 2512A I(T)RMS, 1600000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TA2, 3 PIN	Silicon Controlled Rectifier, 2500A I(T)RMS, 1600000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TA2, 3 PIN	Silicon Controlled Rectifier, 2512A I(T)RMS, 1600000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TA2, 3 PIN
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	POWEREX	POWEREX	POWEREX	POWEREX	POWEREX	POWEREX	POWEREX	POWEREX	POWEREX
package instruction	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2
Contacts	3	3	3	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Nominal circuit commutation break time	250 µs	250 µs	250 µs	250 µs	250 µs	250 µs	250 µs	250 µs	250 µs
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Critical rise rate of minimum off-state voltage	300 V/us	300 V/us	300 V/us	300 V/us	300 V/us	300 V/us	300 V/us	300 V/us	300 V/us
Maximum DC gate trigger current	200 mA	200 mA	200 mA	200 mA	200 mA	200 mA	200 mA	200 mA	200 mA
Maximum DC gate trigger voltage	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
JESD-30 code	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
Maximum leakage current	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA
On-state non-repetitive peak current	29000 A	29000 A	29000 A	29000 A	29000 A	29000 A	29000 A	29000 A	29000 A
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2	2
Maximum on-state current	1600000 A	1600000 A	1600000 A	1600000 A	1600000 A	1600000 A	1600000 A	1600000 A	1600000 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	2500 A	2500 A	2500 A	2500 A	2512 A	2512 A	2512 A	2500 A	2512 A
Off-state repetitive peak voltage	1200 V	1400 V	1600 V	1800 V	400 V	600 V	800 V	1000 V	200 V
Repeated peak reverse voltage	1200 V	1400 V	1600 V	1800 V	400 V	600 V	800 V	1000 V	200 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	END	END	END	END	END	END	END	END
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR

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